3DD4550A4 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD4550A4
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 1050 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 18 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 48
Encapsulados: TO252
Búsqueda de reemplazo de 3DD4550A4
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3DD4550A4 datasheet
9.3. Size:147K crhj
3dd4520 a6.pdf 
NPN R 3DD4520 A6 3DD4520 A6 NPN VCEO 450 V IC 2 A Ptot Tc=25 50 W
9.5. Size:177K crhj
3dd4513a1d.pdf
NPN R 3DD4513 A1D 3DD4513 A1D NPN VCEO 450 V IC 1.3 A Ptot Ta=25 0.8 W
9.7. Size:171K crhj
3dd4515a23.pdf
R NPN 3DD4515 A23 3DD4515 A23 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
9.10. Size:150K crhj
3dd4515 a6.pdf
NPN R 3DD4515 A6 3DD4515 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
9.11. Size:158K crhj
3dd4520a4.pdf
NPN R 3DD4520 A4 3DD4520 A4 NPN VCEO 450 V IC 2 A Ptot Tc=25 35 W
9.15. Size:187K crhj
3dd4518a1d.pdf
NPN R 3DD4518 A1D 3DD4518 A1D-H VCEO 450 V NPN IC 1.8 A Ptot Ta=25 0.8 W
9.16. Size:178K crhj
3dd4513 a1d.pdf
NPN R 3DD4513 A1D 3DD4513 A1D NPN VCEO 450 V IC 1.3 A Ptot Ta=25 0.8 W
9.18. Size:147K crhj
3dd4520a6.pdf
NPN R 3DD4520 A6 3DD4520 A6 NPN VCEO 450 V IC 2 A Ptot Tc=25 50 W
9.19. Size:150K crhj
3dd4515a6.pdf
NPN R 3DD4515 A6 3DD4515 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
9.21. Size:145K crhj
3dd4518a3d.pdf
NPN R 3DD4518 A3D 3DD4518 A3D VCEO 450 V NPN IC 1.8 A Ptot Tc=25 35 W
9.22. Size:148K crhj
3dd4513a6d.pdf
NPN R 3DD4513 A6D 3DD4513 A6D VCEO 450 V NPN IC 1.3 A Ptot TC=25 40 W
9.24. Size:149K crhj
3dd4513 a6d.pdf
NPN R 3DD4513 A6D 3DD4513 A6D VCEO 450 V NPN IC 1.3 A Ptot TC=25 40 W
9.25. Size:159K crhj
3dd4520 a4.pdf
NPN R 3DD4520 A4 3DD4520 A4 NPN VCEO 450 V IC 2 A Ptot Tc=25 35 W
9.26. Size:145K crhj
3dd4518 a3d.pdf
NPN R 3DD4518 A3D 3DD4518 A3D VCEO 450 V NPN IC 1.8 A Ptot Tc=25 35 W
9.27. Size:187K crhj
3dd4518 a1d.pdf
NPN R 3DD4518 A1D 3DD4518 A1D-H VCEO 450 V NPN IC 1.8 A Ptot Ta=25 0.8 W
9.30. Size:214K inchange semiconductor
3dd4515.pdf
isc Silicon NPN Power Transistor 3DD4515 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I =10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,high speed switching and regulated power supply applications. ABS
Otros transistores... 3DD4518A3D, 3DD4518A6D, 3DD4520A3, 3DD4520A4, 3DD4520A6, 3DD4540A3, 3DD4540A7, 3DD4540A9, 2SC5200, 3DD4A, 3DD4G, 3DD5, 3DD50, 3DD505, 3DD507, 3DD51, 3DD510
