3DD4550A4
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD4550A4
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 1050
V
Tensión colector-emisor (Vce): 450
V
Tensión emisor-base (Veb): 18
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 48
Paquete / Cubierta:
TO252
Búsqueda de reemplazo de transistor bipolar 3DD4550A4
3DD4550A4
Datasheet (PDF)
..1. Size:159K crhj
3dd4550a4.pdf 
NPN R 3DD4550 A4 3DD4550 A4 NPN VCEO 450 V IC 5 A Ptot W TC=25 40
7.1. Size:159K crhj
3dd4550 a4.pdf
NPN R 3DD4550 A4 3DD4550 A4 NPN VCEO 450 V IC 5 A Ptot W TC=25 40
9.1. Size:647K jilin sino
3dd4515.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4515 MAIN CHARACTERISTICS Package I 15A CV 400V CEOP (TO-3PN(B)/TO-247) 120W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power
9.2. Size:177K crhj
3dd4515 a1.pdf
NPN R 3DD4515 A1 3DD4515 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
9.3. Size:147K crhj
3dd4520 a6.pdf
NPN R 3DD4520 A6 3DD4520 A6 NPN VCEO 450 V IC 2 A Ptot Tc=25 50 W
9.4. Size:147K crhj
3dd4540a3.pdf
NPN R 3DD4540 A3 3DD4540 A3 NPN VCEO 450 V IC 4 A Ptot TC=25 40 W
9.5. Size:177K crhj
3dd4513a1d.pdf
NPN R 3DD4513 A1D 3DD4513 A1D NPN VCEO 450 V IC 1.3 A Ptot Ta=25 0.8 W
9.6. Size:194K crhj
3dd4530 a1-h.pdf
NPN R 3DD4530 A1-H 3DD4530 A1-H NPN VCEO 400 V IC 3 A Ptot Ta=25 0.8 W
9.7. Size:171K crhj
3dd4515a23.pdf
R NPN 3DD4515 A23 3DD4515 A23 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
9.8. Size:177K crhj
3dd4515a1.pdf
NPN R 3DD4515 A1 3DD4515 A1 NPN VCEO 450 V IC 1.5 A Ptot Ta=25 0.8 W
9.9. Size:152K crhj
3dd4518 a6d.pdf
NPN R 3DD4518 A6D ` 3DD4518 A6D VCEO 450 V NPN IC 1.8 A Ptot TC=25 50 W
9.10. Size:150K crhj
3dd4515 a6.pdf
NPN R 3DD4515 A6 3DD4515 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
9.11. Size:158K crhj
3dd4520a4.pdf
NPN R 3DD4520 A4 3DD4520 A4 NPN VCEO 450 V IC 2 A Ptot Tc=25 35 W
9.12. Size:151K crhj
3dd4540a7.pdf
NPN R 3DD4540 A7 3DD4540 A7 NPN VCEO 450 V IC 4 A Ptot TC=25 50 W
9.13. Size:150K crhj
3dd4540a9.pdf
NPN R 3DD4540 A9 3DD4540 A9 NPN VCEO 450 V IC 4 A Ptot TC=25 75 W
9.14. Size:151K crhj
3dd4540 a7.pdf
NPN R 3DD4540 A7 3DD4540 A7 NPN VCEO 450 V IC 4 A Ptot TC=25 50 W
9.15. Size:187K crhj
3dd4518a1d.pdf
NPN R 3DD4518 A1D 3DD4518 A1D-H VCEO 450 V NPN IC 1.8 A Ptot Ta=25 0.8 W
9.16. Size:178K crhj
3dd4513 a1d.pdf
NPN R 3DD4513 A1D 3DD4513 A1D NPN VCEO 450 V IC 1.3 A Ptot Ta=25 0.8 W
9.17. Size:147K crhj
3dd4540 a3.pdf
NPN R 3DD4540 A3 3DD4540 A3 NPN VCEO 450 V IC 4 A Ptot TC=25 40 W
9.18. Size:147K crhj
3dd4520a6.pdf
NPN R 3DD4520 A6 3DD4520 A6 NPN VCEO 450 V IC 2 A Ptot Tc=25 50 W
9.19. Size:150K crhj
3dd4515a6.pdf
NPN R 3DD4515 A6 3DD4515 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
9.20. Size:152K crhj
3dd4518a6d.pdf
NPN R 3DD4518 A6D ` 3DD4518 A6D VCEO 450 V NPN IC 1.8 A Ptot TC=25 50 W
9.21. Size:145K crhj
3dd4518a3d.pdf
NPN R 3DD4518 A3D 3DD4518 A3D VCEO 450 V NPN IC 1.8 A Ptot Tc=25 35 W
9.22. Size:148K crhj
3dd4513a6d.pdf
NPN R 3DD4513 A6D ` 3DD4513 A6D VCEO 450 V NPN IC 1.3 A Ptot TC=25 40 W
9.23. Size:146K crhj
3dd4520 a3.pdf
NPN R 3DD4520 A3 3DD4520 A3 NPN VCEO 450 V IC 2 A Ptot Tc=25 35 W
9.24. Size:149K crhj
3dd4513 a6d.pdf
NPN R 3DD4513 A6D ` 3DD4513 A6D VCEO 450 V NPN IC 1.3 A Ptot TC=25 40 W
9.25. Size:159K crhj
3dd4520 a4.pdf
NPN R 3DD4520 A4 3DD4520 A4 NPN VCEO 450 V IC 2 A Ptot Tc=25 35 W
9.26. Size:145K crhj
3dd4518 a3d.pdf
NPN R 3DD4518 A3D 3DD4518 A3D VCEO 450 V NPN IC 1.8 A Ptot Tc=25 35 W
9.27. Size:187K crhj
3dd4518 a1d.pdf
NPN R 3DD4518 A1D 3DD4518 A1D-H VCEO 450 V NPN IC 1.8 A Ptot Ta=25 0.8 W
9.28. Size:147K crhj
3dd4520a3.pdf
NPN R 3DD4520 A3 3DD4520 A3 NPN VCEO 450 V IC 2 A Ptot Tc=25 35 W
9.29. Size:150K crhj
3dd4540 a9.pdf
NPN R 3DD4540 A9 3DD4540 A9 NPN VCEO 450 V IC 4 A Ptot TC=25 75 W
9.30. Size:214K inchange semiconductor
3dd4515.pdf
isc Silicon NPN Power Transistor 3DD4515DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.0V(Max) @I =10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,high speed switching andregulated power supply applications.ABS
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
