3DD5 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3DD5 NPN A B C D E F PCM TC=75 25 W ICM 2.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=5mA 30 50 80 110 150 200 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036 FOR LOW FREQUENCY R3DD5036 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO8 A I C3 V(max) V

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCYR 3DD5024P Package MAIN CHARACTERISTICSTO-220HF 1500 VBVCBO 8AIC 3V(max)VCE(sat) 1 s(max)tf APPLICATIONS Horizontal deflection output for color TV.1 2 3 FEATU

NPN WSRs_sQvfSO{HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD5027 ;NSpe MAIN CHARACTERISTICS \ Package IC 3AVCEO 800VPC(TO-220) 50W(u APPLICATIONS op Energy-saving ligh

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY R3DD5032 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BVCBO 8 A Ic 3 V(max) Vce(sat)

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5032P Package MAIN CHARACTERISTICSTO-3P(H)IS 1500 VBVCBO 8 AIC 3 V(max)VCE(sat) 1s(max)tf APPLICATIONS Switching power Supply for color TV. FEATURE

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY R3DD5039 \ Package ;NSpe MAIN CHARACTERISTICS TO-220HF 900 V BV CBO6 A I C1.0 V(max) V C

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD5605Z MAIN CHARACTERISTICS Package I 5A CV 600V CEOP 100W C APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply Hig

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCYR 3DD5023P Package MAIN CHARACTERISTICSTO-220HF 1500 VBVCBO 6 AIC 5 V(max)VCE(sat) 1 s(max)tf APPLICATIONS Horizontal deflection output for color TV.1 2 3 FEA

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY R3DD5287 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 900 V BV CBO5 A I C0.5 V(max) V

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R3DD5011 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS BVCBO 900VIC 10 AVCE(sat) 0.5 V(max)

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5038P Package MAIN CHARACTERISTICSTO-3P(H)IS 1200 VBVCBO 10 AIC 0.5 V(max)VCE(sat) 0.3s(max)tf APPLICATIONS Switching power Supply for color TV. FE

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5017P Package MAIN CHARACTERISTICSTO-3P(H)IS 1000 VBVCBO 12 AIC 0.5 V(max)VCE(sat) 0.3 s(max)tf APPLICATIONS Switching power Supply for color TV. F

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY R3DD5040 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO22 A I C3 V(max) V

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038 FOR LOW FREQUENCY R3DD5038 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1200 V BV CBO10 A I C0.5 V(max) V

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036P FOR LOW FREQUENCYR 3DD5036P Package MAIN CHARACTERISTICS TO-3P(H)IS1500 V BVCBO 10 A IC 3 V(max) VCE(sat) 0.6 s(max) tf APPLICATIONS Horizontal deflection output for color TV.B C E ENT

3DD5023 NPN /SILICON NPN TRANSISTOR Application: Color TV Horizontal deflection output applications :, Features: High breakdown voltageLow drain currentHigh switching speedLow saturation voltageExcellent current characte

3DD5024 NPN /SILICON NPN TRANSISTOR Application: Color TV Horizontal deflection output applications :, Features: High breakdown voltageLow drain currentHigh switching speedLow saturation voltageExcellent current characte

BUL5555(BR3DD5555R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , Fast speed switching, Wide SOA. / Applications High voltage switch mode,suitable for electro

3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA

3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA

3DD5GI-T NPN G H I PCM Tc=75 25 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICE=1mA 400 500 600 V V(BR)CEO ICE=1mA 400 500 600 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCE=100V 0.5 mA ICEO VCE=100V 0.5 mA

3DD59/3DD60 NPN A B C D E F PCM TC=75 25 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=5mA 30 50 80 110 150 200 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA

3DD5AF-T NPN A B C D E F PCM Tc=75 25 W ICM 2 A Tjm 175 Tstg -55~150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=1mA 100 150 200 250 300 350 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCE=50V 0.

3DD56/3DD57 NPN A B C D E F PCM TC=75 10 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 0.5 mA

3DD56/3DD57 NPN A B C D E F PCM TC=75 10 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 0.5 mA

3DD58 NPN A B C D E F PCM Tc=75 10 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=3mA 5.0 V ICBO VCB=50V 0.5 mA

3DD53\3DD54 NPN A B C D E F PCM TC=75 5 W ICM 2 A Tjm 175 Tstg -55~150 VCE=10V Rth 20 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=20V 0.2 mA

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD515NPN Silicon Low Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequency power amplify, power adjustm

Shaanxi Qunli Electric Co., Ltd 11:53:31 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD510,3DD511,DD04,DD05 NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustme

Shaanxi Qunli Electric Co., Ltd 11:53:05 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD512,3DD515 NPN Silicon Low Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequen

Shaanxi Qunli Electric Co., Ltd 11:54:41 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD505,BU104 NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD507NPN Silicon Low Frequency High Power Transistor Features: 1. Three pins isnt connected with the cover. It could be produced according to the requirement. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD511NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustment. 4. Quality Class: JP, JT, JCT, GS,

isc Silicon NPN Power Transistor 3DD523DESCRIPTIONExcellent safe operating areaLow Collector-Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15

isc Silicon NPN Power Transistor 3DD5EDESCRIPTIONExcellent safe operating areaLow Collector-Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 350

isc Silicon NPN Power Transistor 3DD5606DESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO