3DD5. Аналоги и основные параметры
Наименование производителя: 3DD5
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO3
TO220
TO257
Аналоги (замена) для 3DD5
- подборⓘ биполярного транзистора по параметрам
3DD5 даташит
..1. Size:150K china
3dd5.pdf 
3DD5 NPN A B C D E F PCM TC=75 25 W ICM 2.5 A Tjm 175 Tstg -55 150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=5mA 30 50 80 110 150 200 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA
0.2. Size:359K jilin sino
3dd5024p.pdf 
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY R 3DD5024P Package MAIN CHARACTERISTICS TO-220HF 1500 V BV CBO 8A I C 3V(max) V CE(sat) 1 s(max) t f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEATU
0.5. Size:471K jilin sino
3dd5032p.pdf 
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5032P Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO 8 A I C 3 V(max) V CE(sat) 1 s(max) t f APPLICATIONS Switching power Supply for color TV. FEATURE
0.7. Size:534K jilin sino
3dd5605z.pdf 
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD5605Z MAIN CHARACTERISTICS Package I 5A C V 600V CEO P 100W C APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply Hig
0.8. Size:432K jilin sino
3dd5023p.pdf 
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY R 3DD5023P Package MAIN CHARACTERISTICS TO-220HF 1500 V BV CBO 6 A I C 5 V(max) V CE(sat) 1 s(max) t f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEA
0.11. Size:481K jilin sino
3dd5038p.pdf 
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5038P Package MAIN CHARACTERISTICS TO-3P(H)IS 1200 V BV CBO 10 A I C 0.5 V(max) V CE(sat) 0.3 s(max) t f APPLICATIONS Switching power Supply for color TV. FE
0.12. Size:528K jilin sino
3dd5017p.pdf 
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5017P Package MAIN CHARACTERISTICS TO-3P(H)IS 1000 V BV CBO 12 A I C 0.5 V(max) V CE(sat) 0.3 s(max) t f APPLICATIONS Switching power Supply for color TV. F
0.15. Size:485K jilin sino
3dd5036p.pdf 
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036P FOR LOW FREQUENCY R 3DD5036P Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO 10 A I C 3 V(max) V CE(sat) 0.6 s(max) t f APPLICATIONS Horizontal deflection output for color TV. B C E ENT
0.16. Size:207K blue-rocket-elect
3dd5023.pdf 
3DD5023 NPN /SILICON NPN TRANSISTOR Application Color TV Horizontal deflection output applications , Features High breakdown voltage Low drain current High switching speed Low saturation voltage Excellent current characte
0.17. Size:207K blue-rocket-elect
3dd5024.pdf 
3DD5024 NPN /SILICON NPN TRANSISTOR Application Color TV Horizontal deflection output applications , Features High breakdown voltage Low drain current High switching speed Low saturation voltage Excellent current characte
0.18. Size:466K blue-rocket-elect
br3dd5555r.pdf 
BUL5555(BR3DD5555R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , Fast speed switching, Wide SOA. / Applications High voltage switch mode,suitable for electro
0.19. Size:153K china
3dd51.pdf 
3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA
0.20. Size:153K china
3dd50.pdf 
3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA
0.22. Size:151K china
3dd59.pdf 
3DD59/3DD60 NPN A B C D E F PCM TC=75 25 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=5mA 30 50 80 110 150 200 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA
0.23. Size:168K china
3dd5a.pdf 
3DD5A F-T NPN A B C D E F PCM Tc=75 25 W ICM 2 A Tjm 175 Tstg -55 150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=1mA 100 150 200 250 300 350 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCE=50V 0.
0.24. Size:151K china
3dd56.pdf 
3DD56/3DD57 NPN A B C D E F PCM TC=75 10 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 0.5 mA
0.25. Size:151K china
3dd57.pdf 
3DD56/3DD57 NPN A B C D E F PCM TC=75 10 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 0.5 mA
0.26. Size:150K china
3dd58.pdf 
3DD58 NPN A B C D E F PCM Tc=75 10 W ICM 1.5 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=3mA 5.0 V ICBO VCB=50V 0.5 mA
0.27. Size:150K china
3dd53.pdf 
3DD53 3DD54 NPN A B C D E F PCM TC=75 5 W ICM 2 A Tjm 175 Tstg -55 150 VCE=10V Rth 20 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=20V 0.2 mA
0.28. Size:23K shaanxi
3dd515.pdf 
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD515 NPN Silicon Low Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequency power amplify, power adjustm
0.29. Size:36K shaanxi
3dd510.pdf 
Shaanxi Qunli Electric Co., Ltd 11 53 31 Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD510,3DD511,DD04,DD05 NPN Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustme
0.30. Size:34K shaanxi
3dd512.pdf 
Shaanxi Qunli Electric Co., Ltd 11 53 05 Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD512,3DD515 NPN Silicon Low Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequen
0.31. Size:37K shaanxi
3dd505.pdf 
Shaanxi Qunli Electric Co., Ltd 11 54 41 Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD505,BU104 NPN Silicon Low Frequency High Power Transistor Features 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,
0.32. Size:26K shaanxi
3dd507.pdf 
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD507 NPN Silicon Low Frequency High Power Transistor Features 1. Three pins isn t connected with the cover. It could be produced according to the requirement. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4
0.33. Size:23K shaanxi
3dd511.pdf 
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD511 NPN Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustment. 4. Quality Class JP, JT, JCT, GS,
0.34. Size:202K inchange semiconductor
3dd523.pdf 
isc Silicon NPN Power Transistor 3DD523 DESCRIPTION Excellent safe operating area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 15
0.35. Size:234K inchange semiconductor
3dd5e.pdf 
isc Silicon NPN Power Transistor 3DD5E DESCRIPTION Excellent safe operating area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 350
0.36. Size:209K inchange semiconductor
3dd5606.pdf 
isc Silicon NPN Power Transistor 3DD5606 DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
Другие транзисторы: 3DD4520A4, 3DD4520A6, 3DD4540A3, 3DD4540A7, 3DD4540A9, 3DD4550A4, 3DD4A, 3DD4G, 2N3904, 3DD50, 3DD505, 3DD507, 3DD51, 3DD510, 3DD511, 3DD512, 3DD515
