3DD510 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD510
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO3
3DD510 Datasheet (PDF)
3dd510.pdf

Shaanxi Qunli Electric Co., Ltd 11:53:31 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD510,3DD511,DD04,DD05 NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustme
3dd51.pdf

3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA
3dd515.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD515NPN Silicon Low Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequency power amplify, power adjustm
3dd512.pdf

Shaanxi Qunli Electric Co., Ltd 11:53:05 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD512,3DD515 NPN Silicon Low Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequen
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