3DD6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3DD6 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=7mA 30 50 80 110 150 200 V V(BR)CEO ICE=7mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA

BUL6802(BR3DD6802Q) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features , ROHS High Voltage Capability High Speed Switching, wide SOA,ROHS compliant. / Applications

NPN R 3DD6012 A6 3DD6012 A6 NPN VCEO 530 V IC 1.5 A Ptot W TC=25 50

NPN R 3DD6012 A6 3DD6012 A6 NPN VCEO 530 V IC 1.5 A Ptot W TC=25 50

NPN R 3DD6012 A1 3DD6012 A1 NPN VCEO 530 V IC 1.5 A Ptot Ta=25 0.8 W

3DD68/3DD69 NPN A B C D E F PCM TC=75 100 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=20mA 5.0 V ICBO VCB=20V 1.5 mA

3DD65/3DD66 NPN A B C D E F PCM TC=75 75 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.33 /W IC=1.5A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=15mA 5.0 V ICBO VCB=20V 1.

3DD62/3DD63/3DD64 NPN A B C D E F PCM TC=75 50 W ICM 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=7mA 30 50 80 110 150 200 V V(BR)CEO ICE=7mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V

3DD62/3DD63/3DD64 NPN A B C D E F PCM TC=75 50 W ICM 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=7mA 30 50 80 110 150 200 V V(BR)CEO ICE=7mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V

3DD6E-T NPN PCM 50 W ICM 5.0 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=3.0mA 350 V V(BR)CEO ICE=3.0mA 250 V V(BR)EBO IEB=1.0mA 5.0 V ICEO VCE=100V 1.0 mA VBEsat 1.5 IC=2.5A V IB=0.25A VCEsat 1.2 VCE=5.0V hFE 15~270 IC=2.5A

3DD65/3DD66 NPN A B C D E F PCM TC=75 75 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.33 /W IC=1.5A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=15mA 5.0 V ICBO VCB=20V 1.

3DD59/3DD60 NPN A B C D E F PCM TC=75 25 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=5mA 30 50 80 110 150 200 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA

3DD68/3DD69 NPN A B C D E F PCM TC=75 100 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=20mA 5.0 V ICBO VCB=20V 1.5 mA

3DD62/3DD63/3DD64 NPN A B C D E F PCM TC=75 50 W ICM 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=7mA 30 50 80 110 150 200 V V(BR)CEO ICE=7mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V

isc Silicon NPN Power Transistor 3DD6EDESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =10(Min)@I = 2.5AFE CLow Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high power audio ,disk head positioners andother linear applications, which c