Справочник транзисторов. 3DD6

 

Биполярный транзистор 3DD6 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 3DD6
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO276AB TO220 TO257

 Аналоги (замена) для 3DD6

 

 

3DD6 Datasheet (PDF)

 ..1. Size:150K  china
3dd6.pdf

3DD6

3DD6 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=7mA 30 50 80 110 150 200 V V(BR)CEO ICE=7mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA

 0.1. Size:707K  blue-rocket-elect
br3dd6802q.pdf

3DD6
3DD6

BUL6802(BR3DD6802Q) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features , ROHS High Voltage Capability High Speed Switching, wide SOA,ROHS compliant. / Applications

 0.2. Size:149K  crhj
3dd6012 a6.pdf

3DD6
3DD6

NPN R 3DD6012 A6 3DD6012 A6 NPN VCEO 530 V IC 1.5 A Ptot W TC=25 50

 0.3. Size:149K  crhj
3dd6012a6.pdf

3DD6
3DD6

NPN R 3DD6012 A6 3DD6012 A6 NPN VCEO 530 V IC 1.5 A Ptot W TC=25 50

 0.4. Size:194K  crhj
3dd6012 a1.pdf

3DD6
3DD6

NPN R 3DD6012 A1 3DD6012 A1 NPN VCEO 530 V IC 1.5 A Ptot Ta=25 0.8 W

 0.5. Size:131K  china
3dd69.pdf

3DD6

3DD68/3DD69 NPN A B C D E F PCM TC=75 100 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=20mA 5.0 V ICBO VCB=20V 1.5 mA

 0.6. Size:141K  china
3dd66.pdf

3DD6

3DD65/3DD66 NPN A B C D E F PCM TC=75 75 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.33 /W IC=1.5A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=15mA 5.0 V ICBO VCB=20V 1.

 0.7. Size:151K  china
3dd62.pdf

3DD6

3DD62/3DD63/3DD64 NPN A B C D E F PCM TC=75 50 W ICM 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=7mA 30 50 80 110 150 200 V V(BR)CEO ICE=7mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V

 0.8. Size:151K  china
3dd64.pdf

3DD6

3DD62/3DD63/3DD64 NPN A B C D E F PCM TC=75 50 W ICM 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=7mA 30 50 80 110 150 200 V V(BR)CEO ICE=7mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V

 0.9. Size:110K  china
3dd6e-t.pdf

3DD6

3DD6E-T NPN PCM 50 W ICM 5.0 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=3.0mA 350 V V(BR)CEO ICE=3.0mA 250 V V(BR)EBO IEB=1.0mA 5.0 V ICEO VCE=100V 1.0 mA VBEsat 1.5 IC=2.5A V IB=0.25A VCEsat 1.2 VCE=5.0V hFE 15~270 IC=2.5A

 0.10. Size:141K  china
3dd65.pdf

3DD6

3DD65/3DD66 NPN A B C D E F PCM TC=75 75 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.33 /W IC=1.5A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=15mA 5.0 V ICBO VCB=20V 1.

 0.11. Size:151K  china
3dd60.pdf

3DD6

3DD59/3DD60 NPN A B C D E F PCM TC=75 25 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=5mA 30 50 80 110 150 200 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA

 0.12. Size:131K  china
3dd68.pdf

3DD6

3DD68/3DD69 NPN A B C D E F PCM TC=75 100 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=20mA 5.0 V ICBO VCB=20V 1.5 mA

 0.13. Size:151K  china
3dd63.pdf

3DD6

3DD62/3DD63/3DD64 NPN A B C D E F PCM TC=75 50 W ICM 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=7mA 30 50 80 110 150 200 V V(BR)CEO ICE=7mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V

 0.14. Size:221K  inchange semiconductor
3dd6e.pdf

3DD6
3DD6

isc Silicon NPN Power Transistor 3DD6EDESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =10(Min)@I = 2.5AFE CLow Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high power audio ,disk head positioners andother linear applications, which c

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