3DD7 Todos los transistores

 ..1. Size:28K  shaanxi
 3dd7.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD7 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4.

 0.1. Size:151K  crhj
 3dd742a8.pdf

 0.2. Size:152K  crhj
 3dd741a8.pdf

 0.3. Size:152K  crhj
 3dd741 a8.pdf

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 3dd7525a3.pdf

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 3dd741a4.pdf

 0.6. Size:121K  china
 3dd71.pdf

3DD71 NPN A B C D E F PCM TC=75 150 W ICM 20 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.67 /W IC=5A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=20mA 5.0 V ICBO VCB=20V 2.0 mA

 0.7. Size:27K  shaanxi
 3dd73.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD73 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards GJB33 A-97 3. Use for Low-speed switch, power amplify,power adjustm

 0.8. Size:202K  inchange semiconductor
 3dd7d.pdf

isc Silicon NPN Power Transistor 3DD7D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.2V(Max) @I = 3.75A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier, low speed switching and regulated power supply applications. AB