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3DD7 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD7
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3

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3DD7 Datasheet (PDF)

 ..1. Size:28K  shaanxi
3dd7.pdf

3DD7

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD7NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4.

 0.1. Size:151K  crhj
3dd742a8.pdf

3DD7
3DD7

NPN R 3DD742 A8 3DD742 A8 NPN VCEO 400 V IC 5 A Ptot W TC=25 70

 0.2. Size:152K  crhj
3dd741a8.pdf

3DD7
3DD7

NPN R 3DD741 A8 3DD741 A8 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 60

 0.3. Size:152K  crhj
3dd741 a8.pdf

3DD7
3DD7

NPN R 3DD741 A8 3DD741 A8 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 60

 0.4. Size:146K  crhj
3dd7525a3.pdf

3DD7
3DD7

NPN R 3DD7525 A3 3DD7525 A3 NPN VCEO 750 V IC 2.5 A Ptot W TC=25 30

 0.5. Size:159K  crhj
3dd741a4.pdf

3DD7
3DD7

NPN R 3DD741 A4 3DD741 A4 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 30

 0.6. Size:121K  china
3dd71.pdf

3DD7

3DD71 NPN A B C D E F PCM TC=75 150 W ICM 20 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.67 /W IC=5A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=20mA 5.0 V ICBO VCB=20V 2.0 mA

 0.7. Size:27K  shaanxi
3dd73.pdf

3DD7

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD73NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards: GJB33 A-97 3. Use for Low-speed switch, power amplify,power adjustm

 0.8. Size:202K  inchange semiconductor
3dd7d.pdf

3DD7
3DD7

isc Silicon NPN Power Transistor 3DD7DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 3.75ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier, low speed switching andregulated power supply applications.AB

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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