Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD7NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4.

NPN R 3DD742 A8 3DD742 A8 NPN VCEO 400 V IC 5 A Ptot W TC=25 70

NPN R 3DD741 A8 3DD741 A8 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 60

NPN R 3DD741 A8 3DD741 A8 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 60

NPN R 3DD7525 A3 3DD7525 A3 NPN VCEO 750 V IC 2.5 A Ptot W TC=25 30

NPN R 3DD741 A4 3DD741 A4 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 30

3DD71 NPN A B C D E F PCM TC=75 150 W ICM 20 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.67 /W IC=5A V(BR)CBO ICB=10mA 30 50 80 110 150 200 V V(BR)CEO ICE=10mA 30 50 80 110 150 200 V V(BR)EBO IEB=20mA 5.0 V ICBO VCB=20V 2.0 mA

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD73NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards: GJB33 A-97 3. Use for Low-speed switch, power amplify,power adjustm

isc Silicon NPN Power Transistor 3DD7DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 3.75ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier, low speed switching andregulated power supply applications.AB