3DG120
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DG120
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.15
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO18
Búsqueda de reemplazo de transistor bipolar 3DG120
3DG120
Datasheet (PDF)
..1. Size:119K china
3dg120.pdf 
3DG120 NPN A B C D PCM 500 mW ICM 150 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.05 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.05 A
9.1. Size:119K china
3dg12.pdf
3DG12 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 100 140 V V(BR)CEO ICE=0.1mA 30 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A
9.2. Size:120K china
3dg121.pdf
3DG121 NPN A B C D PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.5 A IEBO VEB=1.5V 0.1 A
9.3. Size:119K china
3dg122.pdf
3DG122 NPN A B C D PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.2 A IEBO VEB=1.5V 0.1 A
9.4. Size:221K lzg
3dg1213a.pdf
2SC1213(3DG1213) 2SC1213A(3DG1213A) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier applications . : 2SA673(3CG673)/2SA673A(3CG673A) Features: Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1
9.5. Size:213K lzg
3dg123s.pdf
STD123S(3DG123S) NPN /SILICON NPN TRANSISTOR : Purpose: Low voltage large current drivers. : , Features: Low collector saturation voltage, high DC current gain, large current capability. /Absolute maximum ratings(Ta=25) Symbol
9.6. Size:221K lzg
3dg1213.pdf
2SC1213(3DG1213) 2SC1213A(3DG1213A) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier applications . : 2SA673(3CG673)/2SA673A(3CG673A) Features: Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1
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