3DG142 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DG142
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.015 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 800 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO92 SOT23 TO18
Búsqueda de reemplazo de transistor bipolar 3DG142
3DG142 Datasheet (PDF)
3dg142.pdf
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3DG142 NPN A B C D PCM 100 mW ICM 15 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A
3dg1473.pdf
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2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier applications. :, f , 2SA1018(3CG1018) TFeatures: High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25) Symb
3dg1473a.pdf
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2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier applications. :, f , 2SA1018(3CG1018) TFeatures: High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25) Symb
3dg1417.pdf
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2SC1417(3DG1417) NPN /SILICON NPN TRANSISTOR /Purpose: High frequency amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 20 V CBO V 15 V CEO V 3.0 V EBO I 30 mA C P 100 mW C T 150 j T -55150 stg /Electrical characteristics(Ta=25
3dg140.pdf
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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG140NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source a
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
![3DG142](https://alltransistors.com/images/us.png)
![3DG142](https://alltransistors.com/images/es.png)
![3DG142](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS