3DG142 Todos los transistores

 ..1. Size:127K  china
 3dg142.pdf

3DG142 NPN A B C D PCM 100 mW ICM 15 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

 9.1. Size:146K  foshan
 3dg1473.pdf

2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier applications. , f , 2SA1018(3CG1018) T Features High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25 ) Symb

 9.2. Size:146K  foshan
 3dg1473a.pdf

2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier applications. , f , 2SA1018(3CG1018) T Features High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25 ) Symb

 9.3. Size:179K  lzg
 3dg1417.pdf

2SC1417(3DG1417) NPN /SILICON NPN TRANSISTOR /Purpose High frequency amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 20 V CBO V 15 V CEO V 3.0 V EBO I 30 mA C P 100 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta=25

 9.4. Size:23K  shaanxi
 3dg140.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG140 NPN Silicon High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source a