3DG142 Specs and Replacement
Type Designator: 3DG142
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
3DG142 Substitution
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3DG142 datasheet
3DG142 NPN A B C D PCM 100 mW ICM 15 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A ... See More ⇒
2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier applications. , f , 2SA1018(3CG1018) T Features High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25 ) Symb... See More ⇒
2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier applications. , f , 2SA1018(3CG1018) T Features High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25 ) Symb... See More ⇒
2SC1417(3DG1417) NPN /SILICON NPN TRANSISTOR /Purpose High frequency amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 20 V CBO V 15 V CEO V 3.0 V EBO I 30 mA C P 100 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta=25... See More ⇒
Detailed specifications: 3DG1213A, 3DG122, 3DG123S, 3DG130, 3DG1317, 3DG1318, 3DG140, 3DG1417, TIP2955, 3DG1473, 3DG1473A, 3DG150, 3DG160, 3DG161, 3DG162, 3DG1623, 3DG1627A
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