3DG1959M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3DG1959M
   Código: HVBO_HVBY
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 35 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar 3DG1959M

3DG1959M Datasheet (PDF)

..1. Size:227K foshan
3dg1959m.pdf

2SC1959M(3DG1959M) NPN /SILICON NPN TRANSISTOR :,/Purpose: Audio frequency low power amplifier,driver stage amplifier and switching applications. : h , 2SA562M(3CG562M) FEFeatures: Excellent h Linearity, complementary pair with 2SA562M(3CG562M). FE

7.1. Size:208K foshan
3dg1959.pdf

2SC1959(3DG1959) NPN /SILICON NPN TRANSISTOR :,/Purpose: Audio frequency power amplifier, driver stage amplifier and switching applications. : h , 1W , 2SA562TM(3CG562TM)/Features: Excellent h linearity FEFE 1 Watt output amplifier applications, complemen

9.1. Size:107K china
3dg19a.pdf

3DG19A NPN PCM TA=25 250 mW ICM 600 mA Tjm 150 Tstg -65~150 V(BR)CBO ICB=0.1mA 180 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=120V 0.05 A IEBO VCE=4V 0.05 A IC=50mA VCEsat 0.2 V IB=5mA VCE=5V hFE 80 I

9.2. Size:147K lzg
3dg1923.pdf

2SC1923(3DG1923) NPN /SILICON NPN TRANSISTOR :,FM , Purpose: High frequency, FM,RF,MIX,IF amplifier applications. :, Features: Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25) Symbol Ratin

9.3. Size:236K lzg
3dg1906.pdf

2SC1906(3DG1906) NPN /SILICON NPN TRANSISTOR :,, Purpose: VHF amplifier, mixer, local osciliator. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 19 V CEO V 2.0 V EBO I 50 mA C I -50 mA E P 300 mW CT 150 j T -55150

9.4. Size:210K lzg
3dg1921.pdf

2SC1921(3DG1921) NPN /SILICON NPN TRANSISTOR :,, Purpose: High frequency high voltage amplifier, video output. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 250 V CBO V 200 V CEO V 5.0 V EBO I 50 mA C P 600 mW C T 150 j T -55150 st

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BSV23L | TN2218 | 2N3946 | MD2219AFHXV

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050