All Transistors. 3DG1959M Datasheet

 

3DG1959M Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG1959M

SMD Transistor Code: HVBO_HVBY

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT23

3DG1959M Transistor Equivalent Substitute - Cross-Reference Search

 

3DG1959M Datasheet (PDF)

1.1. 3dg1959m.pdf Size:227K _china

3DG1959M
3DG1959M

 2SC1959M(3DG1959M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频小功率放大,激励级放大及开关电路。/Purpose: Audio frequency low power amplifier,driver stage amplifier and switching applications. 特征:极好的 h 特性,与 2SA562M(3CG562M)互补。 FE Features: Excellent h Linearity, complementary pair with 2SA562M(3CG562M). FE 极限参数

3.1. 3dg1959.pdf Size:208K _china

3DG1959M
3DG1959M

2SC1959(3DG1959) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频小功率放大,激励级放大及开关电路。/Purpose: Audio frequency power amplifier, driver stage amplifier and switching applications. 特征:极好的 h 特性,可得 1W 输出,与 2SA562TM(3CG562TM)互补/Features: Excellent h linearity FE FE 1 Watt output amplifier applications, complemen

 5.1. 3dg1906.pdf Size:236K _china

3DG1959M
3DG1959M

2SC1906(3DG1906) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于甚高频放大,混频,本机振荡。 Purpose: VHF amplifier, mixer, local osciliator. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 19 V CEO V 2.0 V EBO I 50 mA C I -50 mA E P 300 mW C T 150 ℃ j T -55~150 ℃

5.2. 3dg19a.pdf Size:107K _china

3DG1959M

3DG19A 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 250 mW 极 ICM 600 mA 限 Tjm 150 ℃ 值 Tstg -65~150 ℃ V(BR)CBO ICB=0.1mA ≥180 V V(BR)CEO ICE=0.1mA ≥160 V V(BR)EBO IEB=0.1mA ≥6.0 V ICBO VCB=120V ≤0.05 μA 直 流 IEBO VCE=4V ≤0.05 μA 参 IC=50mA 数 VCEsat ≤0.2 V IB=5mA VCE=5V hFE ≥80 I

 5.3. 3dg1921.pdf Size:210K _china

3DG1959M
3DG1959M

2SC1921(3DG1921) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频,高压放大,视频输出。 Purpose: High frequency high voltage amplifier, video output. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 250 V CBO V 200 V CEO V 5.0 V EBO I 50 mA C P 600 mW C T 150 ℃ j T -55~150 ℃ st

5.4. 3dg1923.pdf Size:147K _china

3DG1959M
3DG1959M

2SC1923(3DG1923) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频放大,FM 高放、混频,中放电路。 Purpose: High frequency, FM,RF,MIX,IF amplifier applications. 特征:传输电容小,低噪声系数。 Features: Small reverse transfer capacitance, low noise figure. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Ratin

Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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