3DG2413K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC2413K(3DG2413K) NPN /SILICON NPN TRANSISTOR Applications: High-frequency amplifier applications. : , Features: Low collector capacitance. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 40 V CBO V 25 V CEO V 5.0 V EBO I 50 mA

2SC2412K(3DG2412K) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier. : Features: Low C ob./Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 50 V CEO V 7.0 V EBO I 150 mA C P 200 mW C T 150 j T -55150

2SC2411K(3DG2411K) NPN /SILICON NPN TRANSISTOR :/Purpose: Medium power amplifier applications. :,, 2SA1036K(3CG1036K) Features: Large I , low V ,complementary pair with the 2SA1036K(3CG1036K). C CE(sat)/Absolute maximum ratings(Ta=25)

NPN R 3DG2482H A1 3DG2482H A1 VCEO 400 V NPN IC 0.45 A Ptot Ta=25 0.8 W

NPN R 3DG2482H A1 3DG2482H A1 VCEO 400 V NPN IC 0.45 A Ptot Ta=25 0.8 W

NPN R 3DG2482S 3DG2482S NPN VCEO 400 V IC 0.35 A Ptot Ta=25 0.8 W

2SC2482(3DG2482) NPN /SILICON NPN TRANSISTOR : , Purpose: High voltage switching and amplifier, color TV horiz driver, chroma output applications. : , Features: High voltage, small collector output capacitance. /Absolute maximum ratings(

2SC2404(3DG2404) NPN /SILICON NPN TRANSISTOR : Purpose: Suitable for RF amplifier in FM/AM radios. :/Features: High f . T/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 20 V CEO V 3.0 V EBO I 15 mA C P 100

2SC2458(3DG2458) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency amplifier applications. :,h , h ,, 2SA1048(3CG1048) FE FEFeatures: High current capability, high DC current gain, excellent h linearity, low FEnoise, complementary to 2SA1048(3CG1048).