3DG2734 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DG2734
Código: HGC
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 11 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1400 MHz
Capacitancia de salida (Cc): 0.9 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar 3DG2734
3DG2734 Datasheet (PDF)
3dg2734.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2734(3DG2734) NPN /SILICON NPN TRANSISTOR :,, Purpose: UHF frequency converter, local oscillatorwide band amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 20 V CBO V 11 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150
3dg2736.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2736(3DG2736) NPN /SILICON NPN TRANSISTOR :, Purpose: UHF/VHF frequency converter, local oscillator. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 20 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150 j T -55
3dg2732.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2732(3DG2732) NPN /SILICON NPN TRANSISTOR : Purpose: UHF frequency converter. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I 20 mA C P 150 mW C T 150 j T -55150 stg /Electrical charact
3dg27.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
3DG27 NPN A B C D E PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 100 140 180 220 V V(BR)CEO ICE=0.1mA 60 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 2.0 A ICEO VCE=30V 2.0 A IEBO
3dg2710.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR : Purpose: Audio amplifier applications. : , 2SA1150(3CG1150) Features: High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 35 V CBO
3dg2717.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR :/Purpose: TV final picture IF amplifier applications. :,h /Features: High gain, good linearity of h . FE FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I
3dg2717m.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2717M(3DG2717M) NPN /SILICON NPN TRANSISTOR :/Purpose: TV final picture IF amplifier applications. :,h /Features: High gain, good linearity of h . FE FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO
3dg2712.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2712(3DG2712) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency general purpose amplifier applications. Features: High voltage, high current, high h , low noise, excellent h linearity. FE FE/Absolute maximum ratings(Ta=25)
3dg2715.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2715(3DG2715) NPN /SILICON NPN TRANSISTOR :/Purpose: High frequency amplifier applications. : Features: High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. /Absolute maximum ratings(Ta=25) Sy
3dg2714.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2714(3DG2714) NPN /SILICON NPN TRANSISTOR :/Purpose: High frequency amplifier applications. :, Features: Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 40 V CBO V 30 V CEO V 4
3dg2785.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2785(3DG2785) NPN /SILICON NPN TRANSISTOR :/Purpose: Driver stage of AF amplifier and low speed switching. :,, 2SA1175(3CG1175)/Features: High voltage, excellent h linearity, complementary pair with 2SA1175(3CG1175). FE/Absolute maximum ratings(Ta=25)
3dg2786.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2786(3DG2786) NPN /SILICON NPN TRANSISTOR : Purpose: FM RF amplifier and local oscillator of FM tuner. : Features: High gain bandwidth product, small output capacitance,low noise figure. /Absolute maximum r
3dg2703.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SC2703(3DG2703) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier applications. ::h =100320 FEFeatures: High DC current gain: h =100320. FE/Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO30 V V 30 V CEO V 5.0
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
![3DG2734](https://alltransistors.com/images/us.png)
![3DG2734](https://alltransistors.com/images/es.png)
![3DG2734](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS