3DG3326 Todos los transistores

 

3DG3326 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DG3326
   Código: HPA_HPB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 0.3 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Capacitancia de salida (Cc): 4.8 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar 3DG3326

 

3DG3326 Datasheet (PDF)

 ..1. Size:314K  foshan
3dg3326.pdf

3DG3326 3DG3326

2SC3326(3DG3326) NPN /SILICON NPN TRANSISTOR :/Purpose: For muting and switching applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 20 V CEO V 12 V EBO I 300 mA C I 60 mA B P 150 mW C T 150 j T -55150 stg /Electrical ch

 9.1. Size:112K  jiangsu
3dg3332.pdf

3DG3326

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DG3332 TRANSISTOR (NPN) TO 92 FEATURES 1.EMITTER Low Current High Voltage2. COLLECTOR 3.BASE APPLICATIONS Video Telephony Professional Communication Equipment MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180

 9.2. Size:111K  china
3dg3399.pdf

3DG3326

3DG3399(2SC3399) NPN PCM TA=25 300 mW ICM 100 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.01m 50 V A V(BR)CEO ICE=0.1mA 50 V V(BR)EBO IEB=0.1mA 10 V ICBO VCB=40V 0.1 A ICEO VCB=40V 0.5 A IEBO VEB=5V 80 A IC=5mA VCEsat 0.3 V

 9.3. Size:161K  china
3dg3356.pdf

3DG3326 3DG3326

2SC3356(3DG3356) NPN /SILION NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. : Features: Low noise and high power gain. /Absolute maximum ratings(Ta=25) Symbol Rating Uni

 9.4. Size:202K  foshan
3dg3357.pdf

3DG3326 3DG3326

2SC3357(3DG3357) NPN /SILICON NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. :,, Features: Low noise and high gain, large P in small package. C/Absolute maximum ratings(Ta=25)

 9.5. Size:174K  foshan
3dg3355.pdf

3DG3326 3DG3326

2SC3355(3DG3355) NPN /SILICON NPN TRANSISTOR : Purpose: low noise amplifier at VHF, UHF and CATV band applications. : Features: Low noise and high power gain. /Absolute maximum ratings(Ta=25) Symbol Rating U

 9.6. Size:291K  lzg
3dg3330.pdf

3DG3326 3DG3326

2SC3330(3DG3330) NPN /SILION NPN TRANSISTOR : Purpose: Capable of being used in the low frequency to high frequency range. :/Features: Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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