3DG3326 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DG3326 Specs and Replacement

Type Designator: 3DG3326

SMD Transistor Code: HPA_HPB

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 4.8 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT23

3DG3326 Substitution

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3DG3326 datasheet

..1. Size:314K foshan

3dg3326.pdf pdf_icon

2SC3326(3DG3326) NPN /SILICON NPN TRANSISTOR /Purpose For muting and switching applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 20 V CEO V 12 V EBO I 300 mA C I 60 mA B P 150 mW C T 150 j T -55 150 stg /Electrical ch... See More ⇒

9.1. Size:112K jiangsu

3dg3332.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DG3332 TRANSISTOR (NPN) TO 92 FEATURES 1.EMITTER Low Current High Voltage 2. COLLECTOR 3.BASE APPLICATIONS Video Telephony Professional Communication Equipment MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180... See More ⇒

9.2. Size:111K china

3dg3399.pdf pdf_icon

3DG3399(2SC3399) NPN PCM TA=25 300 mW ICM 100 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.01m 50 V A V(BR)CEO ICE=0.1mA 50 V V(BR)EBO IEB=0.1mA 10 V ICBO VCB=40V 0.1 A ICEO VCB=40V 0.5 A IEBO VEB=5V 80 A IC=5mA VCEsat 0.3 V ... See More ⇒

9.3. Size:161K china

3dg3356.pdf pdf_icon

2SC3356(3DG3356) NPN /SILION NPN TRANSISTOR Purpose low noise amplifier at VHF, UHF and CATV band applications. Features Low noise and high power gain. /Absolute maximum ratings(Ta=25 ) Symbol Rating Uni... See More ⇒