All Transistors. 3DG3326 Datasheet

 

3DG3326 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG3326

SMD Transistor Code: HPA_HPB

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 4.8 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT23

3DG3326 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG3326 Datasheet (PDF)

1.1. 3dg3326.pdf Size:314K _china

3DG3326
3DG3326

2SC3326(3DG3326) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于开关/Purpose: For muting and switching applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 50 V CBO V 20 V CEO V 12 V EBO I 300 mA C I 60 mA B P 150 mW C T 150 ℃ j T -55~150 ℃ stg 电性能参数/Electrical ch

5.1. 3dg3355.pdf Size:174K _china

3DG3326
3DG3326

2SC3355(3DG3355) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于甚高频、超高频和有线电视频段的低噪声放大。 Purpose: low noise amplifier at VHF, UHF and CATV band applications. 特点:低噪声和高功率增益。 Features: Low noise and high power gain. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating U

5.2. 3dg3330.pdf Size:291K _china

3DG3326
3DG3326

2SC3330(3DG3330) 硅 NPN 半导体三极管/SILION NPN TRANSISTOR 用途:用于低频、高频放大电路。 Purpose: Capable of being used in the low frequency to high frequency range. 特点:电流容量大,有宽阔的安全工作区/Features: Large current capacity and wide ASO. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V

 5.3. 3dg3399.pdf Size:111K _china

3DG3326

3DG3399(2SC3399)型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 300 mW 极 ICM 100 mA 限 Tjm 150 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.01m ≥50 V A V(BR)CEO ICE=0.1mA ≥50 V V(BR)EBO IEB=0.1mA ≥10 V ICBO VCB=40V ≤0.1 μA 直 ICEO VCB=40V ≤0.5 μA 流 IEBO VEB=5V ≤80 μA 参 数 IC=5mA VCEsat ≤0.3 V

5.4. 3dg3357.pdf Size:202K _china

3DG3326
3DG3326

2SC3357(3DG3357) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于甚高频、超高频和有线电视频段的低噪声放大。 Purpose: low noise amplifier at VHF, UHF and CATV band applications. 特点:低噪声,高增益,小封装功耗大。 Features: Low noise and high gain, large P in small package. C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符

 5.5. 3dg3356.pdf Size:161K _china

3DG3326
3DG3326

2SC3356(3DG3356) 硅 NPN 半导体三极管/SILION NPN TRANSISTOR 用途:用于甚高频、超高频和有线电视频段的低噪声放大。 Purpose: low noise amplifier at VHF, UHF and CATV band applications. 特点:低噪声和高功率增益。 Features: Low noise and high power gain. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Uni

5.6. 3dg3332.pdf Size:112K _china

3DG3326

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DG3332 TRANSISTOR (NPN) TO – 92 FEATURES 1.EMITTER Low Current High Voltage 2. COLLECTOR 3.BASE APPLICATIONS Video Telephony Professional Communication Equipment MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180

Datasheet: D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , D32S6 , D32S7 , BC547 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 , D32W7 , D32W8 .

 
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