3DK108 Todos los transistores

 ..1. Size:169K  china
 3dk108.pdf

3DK108 NPN A B C D PCM TC=25 1000 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=1.5V 1

 9.1. Size:180K  china
 3dk103.pdf

3DK102 NPN A B C D PCM TC=25 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 20 30 V V(BR)CEO ICE=0.1mA 15 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1

 9.2. Size:181K  china
 3dk101.pdf

3DK101 NPN A B C PCM TC=25 200 mW ICM 40 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 30 30 20 V V(BR)CEO ICE=0.1mA 20 25 15 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A VB

 9.3. Size:170K  china
 3dk105.pdf

 9.4. Size:180K  china
 3dk102.pdf

3DK102 NPN A B C D PCM TC=25 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 20 30 V V(BR)CEO ICE=0.1mA 15 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1

 9.5. Size:170K  china
 3dk106.pdf

3DK106 NPN A B C D PCM TC=25 700 mW ICM 600 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=1.5V 1.0

 9.6. Size:182K  china
 3dk100.pdf

3DK100 NPN A B C PCM TC=25 100 mW ICM 30 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 20 15 V V(BR)CEO ICE=0.1mA 15 15 10 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=6V 0.1 A ICEO VCE=6V 0.1 A IEBO VEB=1.5V 0.1 A VBEs

 9.7. Size:169K  china
 3dk104h.pdf

3DK104H NPN PCM TC=25 700 mW ICM 400 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 100 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=4V 0.1 A VBEsat 0.9 IC=30mA V IB=3mA

 9.8. Size:25K  shaanxi
 3dk10.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK10 NPN Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification circuit. 4. Quali

 9.9. Size:32K  shaanxi
 3dk104.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK104, 3DK105 NPN Silicon High Frequency Moddle Power Switch Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency sma

 9.10. Size:183K  inchange semiconductor
 3dk104b.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE

 9.11. Size:204K  inchange semiconductor
 3dk104d.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE

 9.12. Size:183K  inchange semiconductor
 3dk104f.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE

 9.13. Size:183K  inchange semiconductor
 3dk104c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE

 9.14. Size:205K  inchange semiconductor
 3dk106.pdf

isc Silicon NPN Power Transistor 3DK106 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , re

 9.15. Size:183K  inchange semiconductor
 3dk104e.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE