Справочник транзисторов. 3DK108

 

Биполярный транзистор 3DK108 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 3DK108
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO18

 Аналоги (замена) для 3DK108

 

 

3DK108 Datasheet (PDF)

 ..1. Size:169K  china
3dk108.pdf

3DK108

3DK108 NPN A B C D PCM TC=25 1000 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=1.5V 1

 9.1. Size:180K  china
3dk103.pdf

3DK108

3DK102 NPN A B C D PCM TC=25 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 20 30 V V(BR)CEO ICE=0.1mA 15 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1

 9.2. Size:181K  china
3dk101.pdf

3DK108

3DK101 NPN A B C PCM TC=25 200 mW ICM 40 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 30 30 20 V V(BR)CEO ICE=0.1mA 20 25 15 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A VB

 9.3. Size:170K  china
3dk105.pdf

3DK108

3DK105 NPN A B C D PCM TC=25 700 mW ICM 500 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=4V 1.0

 9.4. Size:180K  china
3dk102.pdf

3DK108

3DK102 NPN A B C D PCM TC=25 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 20 30 V V(BR)CEO ICE=0.1mA 15 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1

 9.5. Size:170K  china
3dk106.pdf

3DK108

3DK106 NPN A B C D PCM TC=25 700 mW ICM 600 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=1.5V 1.0

 9.6. Size:182K  china
3dk100.pdf

3DK108

3DK100 NPN A B C PCM TC=25 100 mW ICM 30 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 20 15 V V(BR)CEO ICE=0.1mA 15 15 10 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=6V 0.1 A ICEO VCE=6V 0.1 A IEBO VEB=1.5V 0.1 A VBEs

 9.7. Size:169K  china
3dk104h.pdf

3DK108

3DK104H NPN PCM TC=25 700 mW ICM 400 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=4V 0.1 A VBEsat 0.9 IC=30mA V IB=3mA

 9.8. Size:25K  shaanxi
3dk10.pdf

3DK108

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK10NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification circuit. 4. Quali

 9.9. Size:32K  shaanxi
3dk104.pdf

3DK108

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK104, 3DK105 NPN Silicon High Frequency Moddle Power Switch Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency sma

 9.10. Size:183K  inchange semiconductor
3dk104b.pdf

3DK108
3DK108

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 9.11. Size:204K  inchange semiconductor
3dk104d.pdf

3DK108
3DK108

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 9.12. Size:183K  inchange semiconductor
3dk104f.pdf

3DK108
3DK108

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 9.13. Size:183K  inchange semiconductor
3dk104c.pdf

3DK108
3DK108

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 9.14. Size:205K  inchange semiconductor
3dk106.pdf

3DK108
3DK108

isc Silicon NPN Power Transistor 3DK106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , re

 9.15. Size:183K  inchange semiconductor
3dk104e.pdf

3DK108
3DK108

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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