3DK4 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

3DK4 Datasheet (PDF)

..1. Size:24K shaanxi
3dk4.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK4NPN Silicon High Frequency M-Power Switch Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency small signal ampl

0.1. Size:117K china
3dk40b.pdf pdf_icon

3DK40B NPN PCM TC=25 225 W ICM 15 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=2mA 50 V V(BR)CEO ICE=2mA 50 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=50V 1.5 mA VBEsat 1.5 IC=10A V IB=1A VCEsat 0.8 VCE=3V hFE 20 IC=10A tr 0.9

0.2. Size:201K china
3dk402.pdf pdf_icon

3DK402 NPN A B C D E PCM TC=25 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V RthJC 3 /W IC=1.5A V(BR)CBO ICB=1mA 150 220 250 300 350 V V(BR)CEO ICE=1mA 150 220 250 300 350 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.5 mA ICEO

0.3. Size:166K china
3dk405.pdf pdf_icon

3DK405 NPN A B C D E F G PCM TC=25 200 W ICM 30 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.75 /W IC=5A V(BR)CBO ICB=1mA 100 150 200 250 300 350 400 V V(BR)CEO ICE=1mA 100 150 200 250 300 350 400 V V(BR)EBO IEB=1mA 5.0 V ICBO

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .