3DK4 Specs and Replacement
Type Designator: 3DK4
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3DK4 Substitution
- BJT ⓘ Cross-Reference Search
3DK4 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK4 NPN Silicon High Frequency M-Power Switch Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency small signal ampl... See More ⇒
3DK40B NPN PCM TC=25 225 W ICM 15 A Tjm 175 Tstg -55 175 V(BR)CBO ICB=2mA 50 V V(BR)CEO ICE=2mA 50 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=50V 1.5 mA VBEsat 1.5 IC=10A V IB=1A VCEsat 0.8 VCE=3V hFE 20 IC=10A tr 0.9 ... See More ⇒
3DK402 NPN A B C D E PCM TC=25 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V RthJC 3 /W IC=1.5A V(BR)CBO ICB=1mA 150 220 250 300 350 V V(BR)CEO ICE=1mA 150 220 250 300 350 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.5 mA ICEO... See More ⇒
3DK405 NPN A B C D E F G PCM TC=25 200 W ICM 30 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.75 /W IC=5A V(BR)CBO ICB=1mA 100 150 200 250 300 350 400 V V(BR)CEO ICE=1mA 100 150 200 250 300 350 400 V V(BR)EBO IEB=1mA 5.0 V ICBO ... See More ⇒
Detailed specifications: 3DK28, 3DK29, 3DK29-II, 3DK3039, 3DK32, 3DK3767, 3DK3879, 3DK3B, 9014, 3DK402, 3DK405, 3DK40B, 3DK50, 3DK5886, 3DK5E, 3DK7, 3DK8
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