3DK4 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DK4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
3DK4 Transistor Equivalent Substitute - Cross-Reference Search
3DK4 Datasheet (PDF)
3dk4.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK4NPN Silicon High Frequency M-Power Switch Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency small signal ampl
3dk40b.pdf
3DK40B NPN PCM TC=25 225 W ICM 15 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=2mA 50 V V(BR)CEO ICE=2mA 50 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=50V 1.5 mA VBEsat 1.5 IC=10A V IB=1A VCEsat 0.8 VCE=3V hFE 20 IC=10A tr 0.9
3dk402.pdf
3DK402 NPN A B C D E PCM TC=25 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V RthJC 3 /W IC=1.5A V(BR)CBO ICB=1mA 150 220 250 300 350 V V(BR)CEO ICE=1mA 150 220 250 300 350 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.5 mA ICEO
3dk405.pdf
3DK405 NPN A B C D E F G PCM TC=25 200 W ICM 30 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.75 /W IC=5A V(BR)CBO ICB=1mA 100 150 200 250 300 350 400 V V(BR)CEO ICE=1mA 100 150 200 250 300 350 400 V V(BR)EBO IEB=1mA 5.0 V ICBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 3DK501D | C44H10 | 2N290
