PH1090-15L Todos los transistores

 

PH1090-15L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH1090-15L
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 58 W
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1090 MHz
   Ganancia de corriente contínua (hfe): 9
   Paquete / Cubierta: CERAMIC
     - Selección de transistores por parámetros

 

PH1090-15L Datasheet (PDF)

 ..1. Size:145K  macom
ph1090-15l.pdf pdf_icon

PH1090-15L

PH1090-15L Avionics Pulsed Power Transistor Released, 30 May 07 15W, 1030-1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and

 6.1. Size:138K  macom
ph1090-175l.pdf pdf_icon

PH1090-15L

PH1090-175L Avionics Pulsed Power Transistor Released, 30 May 07 175W, 1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and ou

 7.1. Size:193K  macom
ph1090-700b.pdf pdf_icon

PH1090-15L

PH1090-700B Avionics Pulsed Power Transistor M/A-COM Products 700W, 1030-1090 MHz, 32s Pulse, 2% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I

 7.2. Size:142K  macom
ph1090-55s.pdf pdf_icon

PH1090-15L

PH1090-550S Avionics Pulsed Power Transistor M/A-COM Products 550W, 1090 MHz, 10s Pulse, 1% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KRC407V | DTA024EEB | ZTX454

 

 
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