Биполярный транзистор PH1090-15L - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PH1090-15L
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 58 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 1090 MHz
Статический коэффициент передачи тока (hfe): 9
Корпус транзистора: CERAMIC
Аналоги (замена) для PH1090-15L
PH1090-15L Datasheet (PDF)
ph1090-15l.pdf
PH1090-15L Avionics Pulsed Power Transistor Released, 30 May 07 15W, 1030-1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and
ph1090-175l.pdf
PH1090-175L Avionics Pulsed Power Transistor Released, 30 May 07 175W, 1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and ou
ph1090-700b.pdf
PH1090-700B Avionics Pulsed Power Transistor M/A-COM Products 700W, 1030-1090 MHz, 32s Pulse, 2% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I
ph1090-55s.pdf
PH1090-550S Avionics Pulsed Power Transistor M/A-COM Products 550W, 1090 MHz, 10s Pulse, 1% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph1090-350l.pdf
PH1090-350L Avionics Pulsed Power Transistor M/A-COM Products 350W, 1090 MHz, 250s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte
ph1090-75l.pdf
PH1090-75L Avionics Pulsed Power Transistor M/A-COM Products 75W, 1030-1090 MHz, 250s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050