PH1090-55S Todos los transistores

 

PH1090-55S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH1090-55S

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 3500 W

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 28 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1090 MHz

Ganancia de corriente contínua (hFE): 7.4

Encapsulados: CERAMIC

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PH1090-55S datasheet

 ..1. Size:142K  macom
 ph1090-55s.pdf pdf_icon

PH1090-55S

PH1090-550S Avionics Pulsed Power Transistor M/A-COM Products 550W, 1090 MHz, 10 s Pulse, 1% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.1. Size:193K  macom
 ph1090-700b.pdf pdf_icon

PH1090-55S

PH1090-700B Avionics Pulsed Power Transistor M/A-COM Products 700W, 1030-1090 MHz, 32 s Pulse, 2% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I

 7.2. Size:147K  macom
 ph1090-350l.pdf pdf_icon

PH1090-55S

PH1090-350L Avionics Pulsed Power Transistor M/A-COM Products 350W, 1090 MHz, 250 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.3. Size:147K  macom
 ph1090-75l.pdf pdf_icon

PH1090-55S

PH1090-75L Avionics Pulsed Power Transistor M/A-COM Products 75W, 1030-1090 MHz, 250 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I

MOSTRAR MÁS

Otros transistores... 3RA2114 , 3SC2655 , 3STF1640 , 3STL2540 , PH0814-40 , PH1090-15L , PH1090-175L , PH1090-350L , 2SD669 , PH1090-700B , PH1090-75L , PH1113-100 , PH1214-0.85L , PH1214-100EL , PH1214-110M , PH1214-12M , PH1214-220M .

 

 

 

 

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