PH1090-55S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH1090-55S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 3500 W
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 28 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1090 MHz
Ganancia de corriente contínua (hfe): 7.4
Paquete / Cubierta: CERAMIC
Búsqueda de reemplazo de transistor bipolar PH1090-55S
PH1090-55S Datasheet (PDF)
ph1090-55s.pdf
PH1090-550S Avionics Pulsed Power Transistor M/A-COM Products 550W, 1090 MHz, 10s Pulse, 1% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph1090-700b.pdf
PH1090-700B Avionics Pulsed Power Transistor M/A-COM Products 700W, 1030-1090 MHz, 32s Pulse, 2% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I
ph1090-350l.pdf
PH1090-350L Avionics Pulsed Power Transistor M/A-COM Products 350W, 1090 MHz, 250s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte
ph1090-75l.pdf
PH1090-75L Avionics Pulsed Power Transistor M/A-COM Products 75W, 1030-1090 MHz, 250s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I
ph1090-15l.pdf
PH1090-15L Avionics Pulsed Power Transistor Released, 30 May 07 15W, 1030-1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and
ph1090-175l.pdf
PH1090-175L Avionics Pulsed Power Transistor Released, 30 May 07 175W, 1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and ou
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050