PH1090-55S Datasheet, Equivalent, Cross Reference Search
Type Designator: PH1090-55S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3500 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 28 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1090 MHz
Forward Current Transfer Ratio (hFE), MIN: 7.4
Noise Figure, dB: -
Package: CERAMIC
PH1090-55S Transistor Equivalent Substitute - Cross-Reference Search
PH1090-55S Datasheet (PDF)
ph1090-55s.pdf
PH1090-550S Avionics Pulsed Power Transistor M/A-COM Products 550W, 1090 MHz, 10s Pulse, 1% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph1090-700b.pdf
PH1090-700B Avionics Pulsed Power Transistor M/A-COM Products 700W, 1030-1090 MHz, 32s Pulse, 2% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I
ph1090-350l.pdf
PH1090-350L Avionics Pulsed Power Transistor M/A-COM Products 350W, 1090 MHz, 250s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte
ph1090-75l.pdf
PH1090-75L Avionics Pulsed Power Transistor M/A-COM Products 75W, 1030-1090 MHz, 250s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system I
ph1090-15l.pdf
PH1090-15L Avionics Pulsed Power Transistor Released, 30 May 07 15W, 1030-1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and
ph1090-175l.pdf
PH1090-175L Avionics Pulsed Power Transistor Released, 30 May 07 175W, 1090 MHz, 250s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and ou
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
