PH1214-100EL Todos los transistores

 

PH1214-100EL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH1214-100EL
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 250 W
   Tensión colector-emisor (Vce): 75 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 14.1 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1400 MHz
   Ganancia de corriente contínua (hfe): 6
   Paquete / Cubierta: CERAMIC

 Búsqueda de reemplazo de transistor bipolar PH1214-100EL

 

PH1214-100EL Datasheet (PDF)

 ..1. Size:140K  macom
ph1214-100el.pdf

PH1214-100EL
PH1214-100EL

PH1214-100EL Radar Pulsed Power Transistor M/A-COM Products 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 6.1. Size:140K  macom
ph1214-110m.pdf

PH1214-100EL
PH1214-100EL

PH1214-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 6.2. Size:134K  macom
ph1214-12m.pdf

PH1214-100EL
PH1214-100EL

PH1214-12M Radar Pulsed Power Transistor M/A-COM Products 12W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.1. Size:136K  macom
ph1214-40m.pdf

PH1214-100EL
PH1214-100EL

PH1214-40M Radar Pulsed Power Transistor M/A-COM Products 40W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.2. Size:143K  macom
ph1214-220m.pdf

PH1214-100EL
PH1214-100EL

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.3. Size:127K  macom
ph1214-6m.pdf

PH1214-100EL
PH1214-100EL

PH1214-6M Radar Pulsed Power Transistor M/A-COM Products 6W, 1.2-1.4 GHz, 100s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.4. Size:163K  macom
ph1214-55el.pdf

PH1214-100EL
PH1214-100EL

PH1214-55EL Radar Pulsed Power Transistor M/A-COM Products 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.5. Size:133K  macom
ph1214-25m.pdf

PH1214-100EL
PH1214-100EL

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.6. Size:142K  macom
ph1214-3l.pdf

PH1214-100EL
PH1214-100EL

PH1214-3L Radar Pulsed Power Transistor M/A-COM Products 3W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal in

 7.7. Size:137K  macom
ph1214-2m.pdf

PH1214-100EL
PH1214-100EL

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.8. Size:138K  macom
ph1214-80m.pdf

PH1214-100EL
PH1214-100EL

PH1214-80M Radar Pulsed Power Transistor M/A-COM Products 80W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.9. Size:136K  macom
ph1214-30el.pdf

PH1214-100EL
PH1214-100EL

PH1214-30EL Radar Pulsed Power Transistor M/A-COM Products 30W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.10. Size:126K  macom
ph1214-25l.pdf

PH1214-100EL
PH1214-100EL

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.11. Size:152K  macom
ph1214-300m.pdf

PH1214-100EL
PH1214-100EL

PH1214-300M Radar Pulsed Power Transistor M/A-COM Products 300W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Outline Drawing Features NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system In

 7.12. Size:156K  macom
ph1214-0.85l.pdf

PH1214-100EL
PH1214-100EL

PH1214-0.85L Radar Pulsed Power Transistor M/A-COM Products 0.85W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common emitter configuration Broadband Class A operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system In

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BD181

 

 
Back to Top

 


History: BD181

PH1214-100EL
  PH1214-100EL
  PH1214-100EL
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top