All Transistors. PH1214-100EL Datasheet

 

PH1214-100EL Datasheet, Equivalent, Cross Reference Search


   Type Designator: PH1214-100EL
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Emitter Voltage |Vce|: 75 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 14.1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 6
   Noise Figure, dB: -
   Package: CERAMIC

 PH1214-100EL Transistor Equivalent Substitute - Cross-Reference Search

   

PH1214-100EL Datasheet (PDF)

 ..1. Size:140K  macom
ph1214-100el.pdf

PH1214-100EL
PH1214-100EL

PH1214-100EL Radar Pulsed Power Transistor M/A-COM Products 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 6.1. Size:140K  macom
ph1214-110m.pdf

PH1214-100EL
PH1214-100EL

PH1214-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 6.2. Size:134K  macom
ph1214-12m.pdf

PH1214-100EL
PH1214-100EL

PH1214-12M Radar Pulsed Power Transistor M/A-COM Products 12W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.1. Size:136K  macom
ph1214-40m.pdf

PH1214-100EL
PH1214-100EL

PH1214-40M Radar Pulsed Power Transistor M/A-COM Products 40W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.2. Size:143K  macom
ph1214-220m.pdf

PH1214-100EL
PH1214-100EL

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.3. Size:127K  macom
ph1214-6m.pdf

PH1214-100EL
PH1214-100EL

PH1214-6M Radar Pulsed Power Transistor M/A-COM Products 6W, 1.2-1.4 GHz, 100s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.4. Size:163K  macom
ph1214-55el.pdf

PH1214-100EL
PH1214-100EL

PH1214-55EL Radar Pulsed Power Transistor M/A-COM Products 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.5. Size:133K  macom
ph1214-25m.pdf

PH1214-100EL
PH1214-100EL

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.6. Size:142K  macom
ph1214-3l.pdf

PH1214-100EL
PH1214-100EL

PH1214-3L Radar Pulsed Power Transistor M/A-COM Products 3W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal in

 7.7. Size:137K  macom
ph1214-2m.pdf

PH1214-100EL
PH1214-100EL

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.8. Size:138K  macom
ph1214-80m.pdf

PH1214-100EL
PH1214-100EL

PH1214-80M Radar Pulsed Power Transistor M/A-COM Products 80W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.9. Size:136K  macom
ph1214-30el.pdf

PH1214-100EL
PH1214-100EL

PH1214-30EL Radar Pulsed Power Transistor M/A-COM Products 30W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.10. Size:126K  macom
ph1214-25l.pdf

PH1214-100EL
PH1214-100EL

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.11. Size:152K  macom
ph1214-300m.pdf

PH1214-100EL
PH1214-100EL

PH1214-300M Radar Pulsed Power Transistor M/A-COM Products 300W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Outline Drawing Features NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system In

 7.12. Size:156K  macom
ph1214-0.85l.pdf

PH1214-100EL
PH1214-100EL

PH1214-0.85L Radar Pulsed Power Transistor M/A-COM Products 0.85W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common emitter configuration Broadband Class A operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system In

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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