PH1214-220M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PH1214-220M
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 700 W
   Tensión colector-emisor (Vce): 70 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 21 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 1400 MHz
   Ganancia de corriente contínua (hfe): 7.4
   Paquete / Cubierta: CERAMIC

Búsqueda de reemplazo de transistor bipolar PH1214-220M

PH1214-220M Datasheet (PDF)

..1. Size:143K macom
ph1214-220m.pdf

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

6.1. Size:133K macom
ph1214-25m.pdf

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

6.2. Size:137K macom
ph1214-2m.pdf

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

6.3. Size:126K macom
ph1214-25l.pdf

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MRF1375

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050