PH1214-25L Todos los transistores

 

PH1214-25L Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH1214-25L

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-emisor (Vce): 70 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 1.6 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1400 MHz

Ganancia de corriente contínua (hFE): 9.5

Encapsulados: CERAMIC

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PH1214-25L datasheet

 ..1. Size:126K  macom
ph1214-25l.pdf pdf_icon

PH1214-25L

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 5.1. Size:133K  macom
ph1214-25m.pdf pdf_icon

PH1214-25L

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 6.1. Size:143K  macom
ph1214-220m.pdf pdf_icon

PH1214-25L

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 6.2. Size:137K  macom
ph1214-2m.pdf pdf_icon

PH1214-25L

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

Otros transistores... PH1090-700B , PH1090-75L , PH1113-100 , PH1214-0.85L , PH1214-100EL , PH1214-110M , PH1214-12M , PH1214-220M , TIP32C , PH1214-25M , PH1214-2M , PH1214-300M , PH1214-30EL , PH1214-3L , PH1214-40M , PH1214-55EL , PH1214-6M .

History: 2SB200A

 

 

 


History: 2SB200A

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