PH1214-25L Todos los transistores

 

PH1214-25L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH1214-25L
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-emisor (Vce): 70 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 1.6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1400 MHz
   Ganancia de corriente contínua (hfe): 9.5
   Paquete / Cubierta: CERAMIC
 

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PH1214-25L Datasheet (PDF)

 ..1. Size:126K  macom
 ph1214-25l.pdf pdf_icon

PH1214-25L

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 5.1. Size:133K  macom
 ph1214-25m.pdf pdf_icon

PH1214-25L

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 6.1. Size:143K  macom
 ph1214-220m.pdf pdf_icon

PH1214-25L

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 6.2. Size:137K  macom
 ph1214-2m.pdf pdf_icon

PH1214-25L

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

MOSTRAR MÁS

Otros transistores... PH1090-700B , PH1090-75L , PH1113-100 , PH1214-0.85L , PH1214-100EL , PH1214-110M , PH1214-12M , PH1214-220M , 2SC1740 , PH1214-25M , PH1214-2M , PH1214-300M , PH1214-30EL , PH1214-3L , PH1214-40M , PH1214-55EL , PH1214-6M .

History: 2SC3327B

 

 
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