All Transistors. PH1214-25L Datasheet

 

PH1214-25L Datasheet and Replacement


   Type Designator: PH1214-25L
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 1.6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 9.5
   Noise Figure, dB: -
   Package: CERAMIC
      - BJT Cross-Reference Search

   

PH1214-25L Datasheet (PDF)

 ..1. Size:126K  macom
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PH1214-25L

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 5.1. Size:133K  macom
ph1214-25m.pdf pdf_icon

PH1214-25L

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 6.1. Size:143K  macom
ph1214-220m.pdf pdf_icon

PH1214-25L

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 6.2. Size:137K  macom
ph1214-2m.pdf pdf_icon

PH1214-25L

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N6372 | ZXTN5551Z | FXTA42 | BD136-6 | BDW21C | 3DG718A | SGS137

Keywords - PH1214-25L transistor datasheet

 PH1214-25L cross reference
 PH1214-25L equivalent finder
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