PH1214-30EL Todos los transistores

 ..1. Size:136K  macom
 ph1214-30el.pdf

PH1214-30EL Radar Pulsed Power Transistor M/A-COM Products 30W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 5.1. Size:152K  macom
 ph1214-300m.pdf

PH1214-300M Radar Pulsed Power Transistor M/A-COM Products 300W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Outline Drawing Features NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system In

 6.1. Size:142K  macom
 ph1214-3l.pdf

PH1214-3L Radar Pulsed Power Transistor M/A-COM Products 3W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal in

 7.1. Size:136K  macom
 ph1214-40m.pdf

PH1214-40M Radar Pulsed Power Transistor M/A-COM Products 40W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.2. Size:140K  macom
 ph1214-110m.pdf

PH1214-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.3. Size:143K  macom
 ph1214-220m.pdf

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.4. Size:134K  macom
 ph1214-12m.pdf

PH1214-12M Radar Pulsed Power Transistor M/A-COM Products 12W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.5. Size:127K  macom
 ph1214-6m.pdf

PH1214-6M Radar Pulsed Power Transistor M/A-COM Products 6W, 1.2-1.4 GHz, 100 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.6. Size:163K  macom
 ph1214-55el.pdf

PH1214-55EL Radar Pulsed Power Transistor M/A-COM Products 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.7. Size:133K  macom
 ph1214-25m.pdf

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.8. Size:137K  macom
 ph1214-2m.pdf

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.9. Size:138K  macom
 ph1214-80m.pdf

PH1214-80M Radar Pulsed Power Transistor M/A-COM Products 80W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.10. Size:140K  macom
 ph1214-100el.pdf

PH1214-100EL Radar Pulsed Power Transistor M/A-COM Products 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.11. Size:126K  macom
 ph1214-25l.pdf

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.12. Size:156K  macom
 ph1214-0.85l.pdf

PH1214-0.85L Radar Pulsed Power Transistor M/A-COM Products 0.85W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common emitter configuration Broadband Class A operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system In