PH1214-30EL PDF and Equivalents Search

 

PH1214-30EL Specs and Replacement

Type Designator: PH1214-30EL

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 115 W

Maximum Collector-Emitter Voltage |Vce|: 56 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1400 MHz

Forward Current Transfer Ratio (hFE), MIN: 7.8

Noise Figure, dB: -

Package: CERAMIC

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PH1214-30EL datasheet

 ..1. Size:136K  macom

ph1214-30el.pdf pdf_icon

PH1214-30EL

PH1214-30EL Radar Pulsed Power Transistor M/A-COM Products 30W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal... See More ⇒

 5.1. Size:152K  macom

ph1214-300m.pdf pdf_icon

PH1214-30EL

PH1214-300M Radar Pulsed Power Transistor M/A-COM Products 300W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Outline Drawing Features NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system In... See More ⇒

 6.1. Size:142K  macom

ph1214-3l.pdf pdf_icon

PH1214-30EL

PH1214-3L Radar Pulsed Power Transistor M/A-COM Products 3W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal in... See More ⇒

 7.1. Size:136K  macom

ph1214-40m.pdf pdf_icon

PH1214-30EL

PH1214-40M Radar Pulsed Power Transistor M/A-COM Products 40W, 1.2-1.4 GHz, 150 s Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern... See More ⇒

Detailed specifications: PH1214-100EL, PH1214-110M, PH1214-12M, PH1214-220M, PH1214-25L, PH1214-25M, PH1214-2M, PH1214-300M, TIP120, PH1214-3L, PH1214-40M, PH1214-55EL, PH1214-6M, PH1214-80M, PH1617-2, PH2226-110M, PH2226-50M

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