PH2226-110M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH2226-110M
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 583 W
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2550 MHz
Ganancia de corriente contínua (hfe): 7.4
Paquete / Cubierta: CERAMIC
Búsqueda de reemplazo de transistor bipolar PH2226-110M
PH2226-110M Datasheet (PDF)
ph2226-110m.pdf
PH2226-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.2-2.6GHz, 100s Pulse, 10% Duty Released, 22 Feb 08 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inter
ph2226-50m.pdf
PH2226-50M Radar Pulsed Power Transistor M/A-COM Products 50W, 2.2-2.6GHz, 100s Pulse, 10% Duty Released, 20 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Interna
ph2222a 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PH2222ANPN switching transistor1999 Apr 27Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationNPN switching transistor PH2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 baseAPPLICATIONS3 collector Switc
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
