PH2226-110M Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH2226-110M
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 583 W
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 2550 MHz
Ganancia de corriente contínua (hFE): 7.4
Encapsulados: CERAMIC
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PH2226-110M datasheet
ph2226-110m.pdf
PH2226-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.2-2.6GHz, 100 s Pulse, 10% Duty Released, 22 Feb 08 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inter
ph2226-50m.pdf
PH2226-50M Radar Pulsed Power Transistor M/A-COM Products 50W, 2.2-2.6GHz, 100 s Pulse, 10% Duty Released, 20 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Interna
ph2222a 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector Switc
Otros transistores... PH1214-300M , PH1214-30EL , PH1214-3L , PH1214-40M , PH1214-55EL , PH1214-6M , PH1214-80M , PH1617-2 , BC547 , PH2226-50M , PH2323-3 , PH2729-110M , PH2729-130M , PH2729-25M , PH2729-65M , PH2729-8.5M , PH2731-20M .
History: 2N6040G
History: 2N6040G
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