PH2226-110M Specs and Replacement
Type Designator: PH2226-110M
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 583 W
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2550 MHz
Forward Current Transfer Ratio (hFE), MIN: 7.4
Package: CERAMIC
PH2226-110M Substitution
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PH2226-110M datasheet
PH2226-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.2-2.6GHz, 100 s Pulse, 10% Duty Released, 22 Feb 08 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inter... See More ⇒
PH2226-50M Radar Pulsed Power Transistor M/A-COM Products 50W, 2.2-2.6GHz, 100 s Pulse, 10% Duty Released, 20 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Interna... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector Switc... See More ⇒
Detailed specifications: PH1214-300M, PH1214-30EL, PH1214-3L, PH1214-40M, PH1214-55EL, PH1214-6M, PH1214-80M, PH1617-2, BC547, PH2226-50M, PH2323-3, PH2729-110M, PH2729-130M, PH2729-25M, PH2729-65M, PH2729-8.5M, PH2731-20M
Keywords - PH2226-110M pdf specs
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