PH2729-110M Todos los transistores

 

PH2729-110M Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH2729-110M

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 330 W

Tensión colector-emisor (Vce): 63 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2900 MHz

Ganancia de corriente contínua (hFE): 6.8

Encapsulados: CERAMIC

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PH2729-110M datasheet

 ..1. Size:103K  macom
ph2729-110m.pdf pdf_icon

PH2729-110M

PH2729-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.7-2.9 GHz, 100 s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 6.1. Size:102K  macom
ph2729-130m.pdf pdf_icon

PH2729-110M

PH2729-130M Radar Pulsed Power Transistor M/A-COM Products 130W, 2.7-2.9 GHz, 100 s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.1. Size:100K  macom
ph2729-25m.pdf pdf_icon

PH2729-110M

PH2729-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 2.7-2.9 GHz, 100 s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.2. Size:102K  macom
ph2729-8.5m.pdf pdf_icon

PH2729-110M

PH2729-8.5M Radar Pulsed Power Transistor M/A-COM Products 8.5W, 2.7-2.9 GHz, 100 s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

Otros transistores... PH1214-40M , PH1214-55EL , PH1214-6M , PH1214-80M , PH1617-2 , PH2226-110M , PH2226-50M , PH2323-3 , BD139 , PH2729-130M , PH2729-25M , PH2729-65M , PH2729-8.5M , PH2731-20M , PH2731-5M , PH2731-75L , PH2856-160 .

 

 

 


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