PH2729-110M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PH2729-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

PH2729-130M Radar Pulsed Power Transistor M/A-COM Products 130W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

PH2729-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

PH2729-8.5M Radar Pulsed Power Transistor M/A-COM Products 8.5W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

PH2729-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern