PH2729-130M
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH2729-130M
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 575
W
Tensión colector-emisor (Vce): 63
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 12.5
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2900
MHz
Ganancia de corriente contínua (hfe): 7
Paquete / Cubierta: CERAMIC
Búsqueda de reemplazo de transistor bipolar PH2729-130M
PH2729-130M
Datasheet (PDF)
..1. Size:102K macom
ph2729-130m.pdf
PH2729-130M Radar Pulsed Power Transistor M/A-COM Products 130W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte
6.1. Size:103K macom
ph2729-110m.pdf
PH2729-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte
7.1. Size:100K macom
ph2729-25m.pdf
PH2729-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
7.2. Size:102K macom
ph2729-8.5m.pdf
PH2729-8.5M Radar Pulsed Power Transistor M/A-COM Products 8.5W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte
7.3. Size:105K macom
ph2729-65m.pdf
PH2729-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
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