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PH2729-130M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH2729-130M
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 575 W
   Tensión colector-emisor (Vce): 63 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 12.5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2900 MHz
   Ganancia de corriente contínua (hfe): 7
   Paquete / Cubierta: CERAMIC
 

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PH2729-130M Datasheet (PDF)

 ..1. Size:102K  macom
 ph2729-130m.pdf pdf_icon

PH2729-130M

PH2729-130M Radar Pulsed Power Transistor M/A-COM Products 130W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 6.1. Size:103K  macom
 ph2729-110m.pdf pdf_icon

PH2729-130M

PH2729-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.1. Size:100K  macom
 ph2729-25m.pdf pdf_icon

PH2729-130M

PH2729-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.2. Size:102K  macom
 ph2729-8.5m.pdf pdf_icon

PH2729-130M

PH2729-8.5M Radar Pulsed Power Transistor M/A-COM Products 8.5W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

MOSTRAR MÁS

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2N4898X

 

 
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