PH2729-8.5M Todos los transistores

 

PH2729-8.5M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH2729-8.5M
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 65 W
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 1.8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2900 MHz
   Ganancia de corriente contínua (hfe): 8.15
   Paquete / Cubierta: CERAMIC
     - Selección de transistores por parámetros

 

PH2729-8.5M Datasheet (PDF)

 ..1. Size:102K  macom
 ph2729-8.5m.pdf pdf_icon

PH2729-8.5M

PH2729-8.5M Radar Pulsed Power Transistor M/A-COM Products 8.5W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.1. Size:100K  macom
 ph2729-25m.pdf pdf_icon

PH2729-8.5M

PH2729-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.2. Size:103K  macom
 ph2729-110m.pdf pdf_icon

PH2729-8.5M

PH2729-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.3. Size:102K  macom
 ph2729-130m.pdf pdf_icon

PH2729-8.5M

PH2729-130M Radar Pulsed Power Transistor M/A-COM Products 130W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SD1879 | MD6003F

 

 
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