All Transistors. PH2729-8.5M Datasheet

 

PH2729-8.5M Datasheet and Replacement


   Type Designator: PH2729-8.5M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 1.8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2900 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8.15
   Noise Figure, dB: -
   Package: CERAMIC
      - BJT Cross-Reference Search

   

PH2729-8.5M Datasheet (PDF)

 ..1. Size:102K  macom
 ph2729-8.5m.pdf pdf_icon

PH2729-8.5M

PH2729-8.5M Radar Pulsed Power Transistor M/A-COM Products 8.5W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.1. Size:100K  macom
 ph2729-25m.pdf pdf_icon

PH2729-8.5M

PH2729-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.2. Size:103K  macom
 ph2729-110m.pdf pdf_icon

PH2729-8.5M

PH2729-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

 7.3. Size:102K  macom
 ph2729-130m.pdf pdf_icon

PH2729-8.5M

PH2729-130M Radar Pulsed Power Transistor M/A-COM Products 130W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inte

SHOW MORE

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | BDX54H | 3DF20D | HPA72R-3 | CK64A | 2SB1132P

Keywords - PH2729-8.5M transistor datasheet

 PH2729-8.5M cross reference
 PH2729-8.5M equivalent finder
 PH2729-8.5M lookup
 PH2729-8.5M substitution
 PH2729-8.5M replacement

 

 
Back to Top

 


 
.