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PH2731-75L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH2731-75L
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 220 W
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3100 MHz
   Ganancia de corriente contínua (hfe): 7.45
   Paquete / Cubierta: CERAMIC

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PH2731-75L Datasheet (PDF)

 ..1. Size:99K  macom
ph2731-75l.pdf

PH2731-75L
PH2731-75L

PH2731-75L Radar Pulsed Power Transistor M/A-COM Products 75W, 2.7-3.1 GHz, 300s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.1. Size:102K  macom
ph2731-5m.pdf

PH2731-75L
PH2731-75L

PH2731-5M Radar Pulsed Power Transistor M/A-COM Products 5W, 2.7-3.1 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.2. Size:101K  macom
ph2731-20m.pdf

PH2731-75L
PH2731-75L

PH2731-20M Radar Pulsed Power Transistor M/A-COM Products 20W, 2.7-3.1 GHz, 100s Pulse, 10% Duty Released, 29 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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