PHPT60415NY Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHPT60415NY  📄📄 

Código: 0415NAB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 105 MHz

Capacitancia de salida (Cc): 90 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT669

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PHPT60415NY datasheet

 ..1. Size:243K  nxp
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PHPT60415NY

PHPT60415NY 40 V, 15 A NPN high power bipolar transistor 27 May 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60415PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

 5.1. Size:243K  nxp
 phpt60415py.pdf pdf_icon

PHPT60415NY

PHPT60415PY 40 V, 15 A PNP high power bipolar transistor 27 May 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60415NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C

 6.1. Size:233K  nxp
 phpt60410ny.pdf pdf_icon

PHPT60415NY

PHPT60410NY 40 V, 10 A NPN high power bipolar transistor 27 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60410PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 6.2. Size:245K  nxp
 phpt60410py.pdf pdf_icon

PHPT60415NY

PHPT60410PY 40 V, 10 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60410NY 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

MOSTRAR MÁS

Otros transistores... PH3135-25S, PH3135-5M, PH3135-65M, PH3135-90S, PHPT60406NY, PHPT60406PY, PHPT60410NY, PHPT60410PY, TIP31C, PHPT60415PY, PHPT60603NY, PHPT60603PY, PHPT60606NY, PHPT60606PY, PHPT60610NY, PHPT60610PY, PHPT61002NYC