PHPT610030PK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHPT610030PK  📄📄 

Código: 10030PK

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 125 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: SOT1205

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PHPT610030PK datasheet

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PHPT610030PK

PHPT610030PK PNP/PNP high power double bipolar transistor 22 October 2014 Product data sheet 1. General description PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. NPN/NPN complement PHPT610030NK. NPN/PNP complement PHPT610030NPK. 2. Features and benefits High thermal power dissipation capability Suita

 4.1. Size:295K  nxp
phpt610030npk.pdf pdf_icon

PHPT610030PK

PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. NPN/NPN complement PHPT610030NK. PNP/PNP complement PHPT610030PK. 2. Features and benefits High thermal power dissipation capability Suita

 4.2. Size:241K  nxp
phpt610030nk.pdf pdf_icon

PHPT610030PK

PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. PNP/PNP complement PHPT610030PK. NPN/PNP complement PHPT610030NPK. 2. Features and benefits High thermal power dissipation capability Suita

 5.1. Size:287K  nxp
phpt61003py.pdf pdf_icon

PHPT610030PK

PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT61003NY 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C R

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