PHPT61006NY Todos los transistores

 

PHPT61006NY . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHPT61006NY
   Código: 1006NAB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 170 MHz
   Capacitancia de salida (Cc): 22 pF
   Ganancia de corriente contínua (hfe): 140
   Paquete / Cubierta: SOT669

 Búsqueda de reemplazo de transistor bipolar PHPT61006NY

 

PHPT61006NY Datasheet (PDF)

 ..1. Size:230K  nxp
phpt61006ny.pdf pdf_icon

PHPT61006NY

PHPT61006NY 100 V, 6 A NPN high power bipolar transistor 26 January 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61006PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 5.1. Size:228K  nxp
phpt61006py.pdf pdf_icon

PHPT61006NY

PHPT61006PY 100 V, 6 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT61006NY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 6.1. Size:287K  nxp
phpt61003py.pdf pdf_icon

PHPT61006NY

PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT61003NY 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C R

 6.2. Size:291K  nxp
phpt61003ny.pdf pdf_icon

PHPT61006NY

PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61003PY 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

Otros transistores... PHPT61002PYC , PHPT610030NK , PHPT610030NPK , PHPT610030PK , PHPT610035NK , PHPT610035PK , PHPT61003NY , PHPT61003PY , BC546 , PHPT61006PY , PHPT61010NY , PHPT61010PY , PIMC31 , PIMZ2 , PMA1302 , PMA1516 , PMB1370 .

History: RN2702JE | DBC846BPDW1T1G | KF503 | EQF0009 | 2SD1015 | BUT13PFI

 

 
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