PHPT61006NY Todos los transistores

 

PHPT61006NY . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHPT61006NY
   Código: 1006NAB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 170 MHz
   Capacitancia de salida (Cc): 22 pF
   Ganancia de corriente contínua (hfe): 140
   Paquete / Cubierta: SOT669

 Búsqueda de reemplazo de transistor bipolar PHPT61006NY

 

PHPT61006NY Datasheet (PDF)

 ..1. Size:230K  nxp
phpt61006ny.pdf

PHPT61006NY PHPT61006NY

PHPT61006NY100 V, 6 A NPN high power bipolar transistor26 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT61006PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 5.1. Size:228K  nxp
phpt61006py.pdf

PHPT61006NY PHPT61006NY

PHPT61006PY100 V, 6 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT61006NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 6.1. Size:287K  nxp
phpt61003py.pdf

PHPT61006NY PHPT61006NY

PHPT61003PY100 V, 3A PNP high power bipolar transistor13 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61003NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C R

 6.2. Size:291K  nxp
phpt61003ny.pdf

PHPT61006NY PHPT61006NY

PHPT61003NY100 V, 3 A NPN high power bipolar transistor3 February 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61003PY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 6.3. Size:255K  nxp
phpt61002pyclh.pdf

PHPT61006NY PHPT61006NY

PHPT61002PYCLH100 V, 2 A PNP high power bipolar transistor13 July 2017 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.NPN complement: PHPT61002NYCLH.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 6.4. Size:243K  nxp
phpt61002nyclh.pdf

PHPT61006NY PHPT61006NY

PHPT61002NYCLH100 V, 2 A NPN high power bipolar transistor31 March 2017 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.PNP complement: PHPT61002PYCLH2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced P

 6.5. Size:238K  nxp
phpt610035pk.pdf

PHPT61006NY PHPT61006NY

PHPT610035PKPNP/PNP matched high power double bipolar transistor24 October 2014 Product data sheet1. General descriptionPNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D)Surface-Mounted Device (SMD) power plastic package. Matched version ofPHPT610030PK.NPN/NPN complement: PHPT610035NK.2. Features and benefits Current gain matching 10 % High th

 6.6. Size:283K  nxp
phpt61002nyc.pdf

PHPT61006NY PHPT61006NY

PHPT61002NYC100V, 2 A NPN high power bipolar transistor9 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61002PYC2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 6.7. Size:295K  nxp
phpt610030npk.pdf

PHPT61006NY PHPT61006NY

PHPT610030NPKNPN/PNP high power double bipolar transistor14 October 2014 Product data sheet1. General descriptionNPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.NPN/NPN complement: PHPT610030NK.PNP/PNP complement: PHPT610030PK.2. Features and benefits High thermal power dissipation capability Suita

 6.8. Size:241K  nxp
phpt610030nk.pdf

PHPT61006NY PHPT61006NY

PHPT610030NKNPN/NPN high power double bipolar transistor20 October 2014 Product data sheet1. General descriptionNPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.PNP/PNP complement: PHPT610030PK.NPN/PNP complement: PHPT610030NPK.2. Features and benefits High thermal power dissipation capability Suita

 6.9. Size:239K  nxp
phpt610030pk.pdf

PHPT61006NY PHPT61006NY

PHPT610030PKPNP/PNP high power double bipolar transistor22 October 2014 Product data sheet1. General descriptionPNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.NPN/NPN complement: PHPT610030NK.NPN/PNP complement: PHPT610030NPK.2. Features and benefits High thermal power dissipation capability Suita

 6.10. Size:241K  nxp
phpt610035nk.pdf

PHPT61006NY PHPT61006NY

PHPT610035NKNPN/NPN high power double bipolar transistor14 October 2014 Product data sheet1. General descriptionNPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK.PNP/PNP complement: PHPT610035PK.NPN/PNP complement: PHPT610035NPK.2. Features and benefits Current gain matchi

 6.11. Size:284K  nxp
phpt61002pyc.pdf

PHPT61006NY PHPT61006NY

PHPT61002PYC100 V, 2 A PNP high power bipolar transistor10 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61002NYC.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

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