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PHPT61006NY . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHPT61006NY
   Código: 1006NAB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 170 MHz
   Capacitancia de salida (Cc): 22 pF
   Ganancia de corriente contínua (hfe): 140
   Paquete / Cubierta: SOT669
 

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PHPT61006NY Datasheet (PDF)

 ..1. Size:230K  nxp
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PHPT61006NY

PHPT61006NY100 V, 6 A NPN high power bipolar transistor26 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT61006PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 5.1. Size:228K  nxp
phpt61006py.pdf pdf_icon

PHPT61006NY

PHPT61006PY100 V, 6 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT61006NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 6.1. Size:287K  nxp
phpt61003py.pdf pdf_icon

PHPT61006NY

PHPT61003PY100 V, 3A PNP high power bipolar transistor13 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61003NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C R

 6.2. Size:291K  nxp
phpt61003ny.pdf pdf_icon

PHPT61006NY

PHPT61003NY100 V, 3 A NPN high power bipolar transistor3 February 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61003PY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

Otros transistores... PHPT61002PYC , PHPT610030NK , PHPT610030NPK , PHPT610030PK , PHPT610035NK , PHPT610035PK , PHPT61003NY , PHPT61003PY , 8050 , PHPT61006PY , PHPT61010NY , PHPT61010PY , PIMC31 , PIMZ2 , PMA1302 , PMA1516 , PMB1370 .

 

 
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