PHPT61006PY
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHPT61006PY
Código: 1006PAB
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 116
MHz
Capacitancia de salida (Cc): 52
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
SOT669
Búsqueda de reemplazo de transistor bipolar PHPT61006PY
PHPT61006PY
Datasheet (PDF)
..1. Size:228K nxp
phpt61006py.pdf 
PHPT61006PY100 V, 6 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT61006NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print
5.1. Size:230K nxp
phpt61006ny.pdf
PHPT61006NY100 V, 6 A NPN high power bipolar transistor26 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT61006PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print
6.1. Size:287K nxp
phpt61003py.pdf
PHPT61003PY100 V, 3A PNP high power bipolar transistor13 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61003NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C R
6.2. Size:291K nxp
phpt61003ny.pdf
PHPT61003NY100 V, 3 A NPN high power bipolar transistor3 February 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61003PY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
6.3. Size:255K nxp
phpt61002pyclh.pdf
PHPT61002PYCLH100 V, 2 A PNP high power bipolar transistor13 July 2017 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.NPN complement: PHPT61002NYCLH.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
6.4. Size:243K nxp
phpt61002nyclh.pdf
PHPT61002NYCLH100 V, 2 A NPN high power bipolar transistor31 March 2017 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.PNP complement: PHPT61002PYCLH2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced P
6.5. Size:238K nxp
phpt610035pk.pdf
PHPT610035PKPNP/PNP matched high power double bipolar transistor24 October 2014 Product data sheet1. General descriptionPNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D)Surface-Mounted Device (SMD) power plastic package. Matched version ofPHPT610030PK.NPN/NPN complement: PHPT610035NK.2. Features and benefits Current gain matching 10 % High th
6.6. Size:283K nxp
phpt61002nyc.pdf
PHPT61002NYC100V, 2 A NPN high power bipolar transistor9 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61002PYC2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print
6.7. Size:295K nxp
phpt610030npk.pdf
PHPT610030NPKNPN/PNP high power double bipolar transistor14 October 2014 Product data sheet1. General descriptionNPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.NPN/NPN complement: PHPT610030NK.PNP/PNP complement: PHPT610030PK.2. Features and benefits High thermal power dissipation capability Suita
6.8. Size:241K nxp
phpt610030nk.pdf
PHPT610030NKNPN/NPN high power double bipolar transistor20 October 2014 Product data sheet1. General descriptionNPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.PNP/PNP complement: PHPT610030PK.NPN/PNP complement: PHPT610030NPK.2. Features and benefits High thermal power dissipation capability Suita
6.9. Size:239K nxp
phpt610030pk.pdf
PHPT610030PKPNP/PNP high power double bipolar transistor22 October 2014 Product data sheet1. General descriptionPNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.NPN/NPN complement: PHPT610030NK.NPN/PNP complement: PHPT610030NPK.2. Features and benefits High thermal power dissipation capability Suita
6.10. Size:241K nxp
phpt610035nk.pdf
PHPT610035NKNPN/NPN high power double bipolar transistor14 October 2014 Product data sheet1. General descriptionNPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK.PNP/PNP complement: PHPT610035PK.NPN/PNP complement: PHPT610035NPK.2. Features and benefits Current gain matchi
6.11. Size:284K nxp
phpt61002pyc.pdf
PHPT61002PYC100 V, 2 A PNP high power bipolar transistor10 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61002NYC.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
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