2N3019DCSM Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3019DCSM

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 140 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: LCC2

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2N3019DCSM datasheet

 ..1. Size:385K  semelab
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2N3019DCSM

NPN SILICON DUAL TRANSISTORS 2N3019DCSM High Voltage, High Current Dual Small Signal NPN Transistors. Hermetic Ceramic Surface Mount Package. Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25 C unless otherwise stated) Each Side Total Device Each Side

 8.1. Size:51K  philips
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2N3019DCSM

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N3019 NPN medium power transistor 1997 Jun 19 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N3019 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter

 8.2. Size:47K  st
2n3019 .pdf pdf_icon

2N3019DCSM

2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 140 V VCEO C

 8.3. Size:46K  st
2n3019.pdf pdf_icon

2N3019DCSM

2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 140 V VCEO C

Otros transistores... 2N2907AUBC, 2N2919L, 2N2919U, 2N2920ADCSM, 2N2920AHR, 2N2920L, 2N2920U, 2N3012CSM, BC548, 2N3053SMD, 2N3053SMD05, 2N3055AG, 2N3055ESMD, 2N3055G, 2N3114CSM, 2N3209X, 2N3209XCSM