2N3735CSM4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3735CSM4
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 9 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: LCC3
Búsqueda de reemplazo de 2N3735CSM4
2N3735CSM4 Datasheet (PDF)
2n3735csm4.pdf

2N3735CSM4Medium Current NPN Silicon AnnularTransistors Designed for High-SpeedSwitching and Driver Applications in aCeramic Surface Mount PackageMECHANICAL DATADimensions in mm (inches)1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)FEATURES0.23rad.(0.009) High Voltage3 2 Ceramic Surface Mount Package0.234 1min
2n3735l.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN2N3737 2N3737UB JANTXJANTXVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol M
2n3738.pdf

2N3738MECHANICAL DATAPOWER TRANSISTORSDimensions in mmNPN SILICON6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.1 2FEATURES Hermetically Packaged. Low Saturation Voltage High Gain1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Package (TO-213AA)Pin 1 = Base Pin 2 = Emitter Case = CollectorA
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: STI13005-1 | ZXTP2013 | PBSS8110T
History: STI13005-1 | ZXTP2013 | PBSS8110T



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