2N3737UB Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3737UB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 75 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 9 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: UB

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2N3737UB datasheet

 ..1. Size:178K  microsemi
2n3737ub.pdf pdf_icon

2N3737UB

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN 2N3737 2N3737UB JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol M

 8.1. Size:210K  semicoa
2n3737.pdf pdf_icon

2N3737UB

2N3737 Silicon NPN Transistor Data Sheet Description Applications General purpose Low power Semicoa Semiconductors offers NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3737J) JANTX level (2N3737JX) JANTXV level (2N3737JV) JANS level (2N3737JS) QCI to the applicable level 100% die visual

 9.2. Size:17K  semelab
2n3738.pdf pdf_icon

2N3737UB

2N3738 MECHANICAL DATA POWER TRANSISTORS Dimensions in mm NPN SILICON 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. 1 2 FEATURES Hermetically Packaged. Low Saturation Voltage High Gain 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 Package (TO-213AA) Pin 1 = Base Pin 2 = Emitter Case = Collector A

Otros transistores... 2N3716SMD, 2N3716X, 2N3724L, 2N3724UB, 2N3725L, 2N3725UB, 2N3735CSM4, 2N3735L, 2SD669, 2N3740R, 2N3741SMD, 2N3762L, 2N3763L, 2N3766SMD, 2N3766SMD05, 2N3767SMD, 2N3767SMD05