2N3737UB PDF Specs and Replacement
Type Designator: 2N3737UB
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: UB
2N3737UB Substitution
2N3737UB PDF detailed specifications
2n3737ub.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN 2N3737 2N3737UB JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol M... See More ⇒
2n3737.pdf
2N3737 Silicon NPN Transistor Data Sheet Description Applications General purpose Low power Semicoa Semiconductors offers NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3737J) JANTX level (2N3737JX) JANTXV level (2N3737JV) JANS level (2N3737JS) QCI to the applicable level 100% die visual... See More ⇒
2n3738.pdf
2N3738 MECHANICAL DATA POWER TRANSISTORS Dimensions in mm NPN SILICON 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. 1 2 FEATURES Hermetically Packaged. Low Saturation Voltage High Gain 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 Package (TO-213AA) Pin 1 = Base Pin 2 = Emitter Case = Collector A... See More ⇒
Detailed specifications: 2N3716SMD , 2N3716X , 2N3724L , 2N3724UB , 2N3725L , 2N3725UB , 2N3735CSM4 , 2N3735L , 2SD669 , 2N3740R , 2N3741SMD , 2N3762L , 2N3763L , 2N3766SMD , 2N3766SMD05 , 2N3767SMD , 2N3767SMD05 .
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