2N3768 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3768
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 115 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 500 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO254AA
Búsqueda de reemplazo de 2N3768
2N3768 PDF detailed specifications
2n3768.pdf
The documentation and process conversion measures necessary to comply with this document shall be INCH-POUND completed by 18 February 2014. MIL-PRF-19500/622D 18 December 2013 SUPERSEDING MIL-PRF-19500/622C 25 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS This specification... See More ⇒
2n3766smd.pdf
2N3766SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0... See More ⇒
2n3767smd05.pdf
2N3767SMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) NPN BIPOLAR TRANSISTOR 0.76 (0.030) min. IN A CERAMIC SURFACE MOUNT 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) PACKAGE FOR HIGH REL APPLICATIONS 1 3 2 FEATURES HIGH VOLTAGE 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) FAST SWITCHING 0.50 (0.020) max. 7.26 (0.286) CER... See More ⇒
Otros transistores... 2N3740R , 2N3741SMD , 2N3762L , 2N3763L , 2N3766SMD , 2N3766SMD05 , 2N3767SMD , 2N3767SMD05 , TIP32C , 2N3771G , 2N3772G , 2N3773G , 2N3789X , 2N3789XSMD , 2N3790SMD , 2N3790XSMD , 2N3791SMD .
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