2N3811U Todos los transistores

 

2N3811U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N3811U
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: TO78

 Búsqueda de reemplazo de transistor bipolar 2N3811U

 

2N3811U Datasheet (PDF)

 ..1. Size:305K  microsemi
2n3811u.pdf

2N3811U
2N3811U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN2N3810L

 8.1. Size:61K  microsemi
2n3810 2n3811.pdf

2N3811U
2N3811U

TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices Qualified Level 2N3810 2N3811 JAN 2N3810L 2N3811L JANTX 2N3810U 2N3811U JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 50 mAdc IC One Both Section 1

 8.2. Size:305K  microsemi
2n3811l.pdf

2N3811U
2N3811U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN2N3810L

 9.1. Size:65K  philips
2n3819-p.pdf

2N3811U
2N3811U

 9.2. Size:387K  st
2n3810hr.pdf

2N3811U
2N3811U

2N3810HRHi-Rel PNP dual matched bipolar transistor 60 V, 0.05 ADatasheet - production dataFeatures BVCEO 60 VIC (max) 0.05 AHFE at 10 V - 150 mA > 150Operating temperature range -65C to +200C123465 Hi-Rel PNP dual matched bipolar transistor TO-78 LCC-6 Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiatio

 9.3. Size:29K  fairchild semi
2n3819.pdf

2N3811U
2N3811U

2N3819N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50.TO-9211. Drain 2. Gate 3. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 25

 9.4. Size:53K  vishay
2n3819 2.pdf

2N3811U
2N3811U

2N3819Vishay SiliconixN-Channel JFETPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)v 8 25 2 2FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerGps 11 dB @ 400 MHzD Very High System Sensitivity D OscillatorD Very Low Noise: 3 dB @ 400 MHzD High Quality of Amplification D Sample-a

 9.5. Size:170K  onsemi
2n3819.pdf

2N3811U
2N3811U

2N3819JFET VHF/UHF AmplifierNChannel DepletionMAXIMUM RATINGShttp://onsemi.comRating Symbol Value UnitDrainSource Voltage VDS 25 Vdc3 DRAINDrainGate Voltage VDG 25 VdcGateSource Voltage VGS 25 Vdc2Drain Current ID 100 mAdcGATEForward Gate Current IG(f) 10 mAdcTotal Device Dissipation PD1 SOURCE@ TA = 25C 350 mWDerate above 25C 2.8 mW/CSt

 9.6. Size:273K  no
2n380x-a 2n381x-a.pdf

2N3811U
2N3811U

 9.7. Size:305K  microsemi
2n3810u.pdf

2N3811U
2N3811U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN2N3810L

 9.8. Size:305K  microsemi
2n3810l.pdf

2N3811U
2N3811U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN2N3810L

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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