2N3811U - описание и поиск аналогов

 ..1. Size:305K  microsemi
 2n3811u.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN 2N3810L

 8.1. Size:61K  microsemi
 2n3810 2n3811.pdf 

TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices Qualified Level 2N3810 2N3811 JAN 2N3810L 2N3811L JANTX 2N3810U 2N3811U JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 50 mAdc IC One Both Section 1

 8.2. Size:305K  microsemi
 2n3811l.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN 2N3810L

 9.1. Size:65K  philips
 2n3819-p.pdf 

 9.2. Size:387K  st
 2n3810hr.pdf 

2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features BVCEO 60 V IC (max) 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65 C to +200 C 1 2 3 4 6 5 Hi-Rel PNP dual matched bipolar transistor TO-78 LCC-6 Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiatio

 9.3. Size:29K  fairchild semi
 2n3819.pdf 

2N3819 N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 25

 9.4. Size:53K  vishay
 2n3819 2.pdf 

2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v 8 25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer Gps 11 dB @ 400 MHz D Very High System Sensitivity D Oscillator D Very Low Noise 3 dB @ 400 MHz D High Quality of Amplification D Sample-a

 9.5. Size:170K  onsemi
 2n3819.pdf 

2N3819 JFET VHF/UHF Amplifier N Channel Depletion MAXIMUM RATINGS http //onsemi.com Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc 3 DRAIN Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc 2 Drain Current ID 100 mAdc GATE Forward Gate Current IG(f) 10 mAdc Total Device Dissipation PD 1 SOURCE @ TA = 25 C 350 mW Derate above 25 C 2.8 mW/ C St

 9.6. Size:273K  no
 2n380x-a 2n381x-a.pdf 

 9.7. Size:305K  microsemi
 2n3810u.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN 2N3810L

 9.8. Size:305K  microsemi
 2n3810l.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN 2N3810L